High-resolution TEM characterization of MOVPE-grown (1Â 1Â 1)-BP layer on hexagonal 6H (0Â 0Â 0Â 1)-SiC

A BP layer was grown on the (0 0 0 1)-surface of 6H-type hexagonal SiC substrate by atmospheric-pressure metalorganic VPE, and crystallographic feature of the resultant BP/SiC hetero-structure was evaluated by transmission electron microscopy (TEM) and transmission electron diffraction (TED). Analysis of the TED patterns from the hetero-structure gave the following epitaxial relationship: (0 0 0 1), -SiC // (1 1 1), <1 1 0>-BP. Extra diffraction spots in the TED pattern indicated the presence of {1 1 1}-twins in the (1 1 1)-BP layer. High-resolution TEM observation also revealed the presence of random texture which involved irregular configuration of atomic planes in the (1 1 1)-BP layer at the hetero-interface with the (0 0 0 1)-SiC. The MOCVD-grown (1 1 1)-BP layer was deduced to develop on the (0 0 0 1)-SiC, accompanying the formation of the (1 1 1)-twins and of the random texture at the interface with the (0 0 0 1)-SiC.