کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
547933 | 872070 | 2008 | 5 صفحه PDF | دانلود رایگان |
Zinc-blende BxGa1−xAs alloys have been successfully grown on exactly oriented (0 0 1)GaAs substrates using triethylboron, trimethylgallium and arsine sources. The growth has been accomplished in a vertical low-pressure metalorganic chemical vapor deposition (LP-MOCVD) reactor. Boron incorporation behaviors have been extensively studied as a function of growth temperature and gas-phase boron mole fraction. The evolution of surface morphology was also observed.The maximum boron composition of 5.8% is obtained at the optimum growth temperature of 580 °C. RMS roughness over the surface area of 1×1 μm2 is only 0.17 nm at such growth conditions. Based on the experimental results, it has been clearly shown that boron incorporation will decrease significantly at higher temperature (>610 °C) or at much lower temperature (⩽550 °C).
Journal: Microelectronics Journal - Volume 39, Issue 12, December 2008, Pages 1678–1682