کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1497487 | 993016 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Crack control in GaN grown on silicon (1Â 1Â 1) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The effects of In doped low-temperature (LT) AlGaN interlayer on the properties of GaN/Si(1 1 1) by MOCVD have been investigated. Using In doping LT-interlayer can decrease the stress sufficiently for avoiding crack formation in a thick (2.0 μm) GaN layer. Significant improvement in the crystal and optical properties of GaN layer is also achieved. In doping is observed to reduce the stress in AlGaN interlayer measured by high-resolution X-ray diffraction (HRXRD). It can provide more compressive stress to counteract tensile stress and reduce crack density in subsequent GaN layer. Moreover, as a surfactant, indium is observed to cause an enhanced PL intensity and the narrowed linewidths of PL and XRD spectra for the LT-interlayer. Additionally, the crystal quality of GaN layer is found to be dependent on the growth parameters of underneath In-doped LT-AlGaN interlayer. The optimal parameters, such as TMIn flow rate, TMAl flow rates and thickness, are achieved to obtain nearly 2.0 μm thick crack free GaN film with advanced optical and crystal properties.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 28, Issue 10, July 2006, Pages 1227-1231
Journal: Optical Materials - Volume 28, Issue 10, July 2006, Pages 1227-1231
نویسندگان
Jiejun Wu, Xiuxun Han, Jiemin Li, Hongyuan Wei, Guangwei Cong, Xianglin Liu, Qinsheng Zhu, Zhanguo Wang, Quanjie Jia, Liping Guo, Tiandou Hu, Huanhua Wang,