کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1672430 | 1008933 | 2008 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
GaN on Si-rich SiNx-coated sapphire at different growth stages: The surface morphologies and optical properties
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Distinct GaN islands of triangular base were formed during the annealing processes of GaN nucleation layers grown on Si-rich SiNx nanoislands patterned sapphire substrates due to enhanced diffusion and regrowth anisotropy. Subsequent high temperature growth of GaN epilayers on the nucleation layers resulted in island coarsening and shape variations from triangular to hexagonal due to the dominating gas phase transport growth mechanism and limited diffusion length. Further growth with high V/III ratios resulted in layer-growth of atomic flatness. The atomic force microscopy, X-ray diffraction, and photoluminescence studies showed a significant improvement of the crystalline qualities and enhancement of the optical properties.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 18, 31 July 2008, Pages 6344–6352
Journal: Thin Solid Films - Volume 516, Issue 18, 31 July 2008, Pages 6344–6352
نویسندگان
Z.L. Fang, S.P. Li, J.C. Li, H.Z. Sun, S.J. Wang, J.Y. Kang,