کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8149206 | 1524375 | 2016 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improved crystal quality of semipolar (101¯3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The planar epitaxial growth of semipolar (101¯3) GaN on a Si(001) substrate was performed on a directionally sputtered AlN buffer layer. Three types of interlayers, i.e., single AlN, double AlN, and a stack of AlN/GaN layers were grown by metalorganic chemical vapor deposition (MOCVD) to achieve high quality GaN films. The results for the stack of AlN/GaN layers provide highest crystal quality and optical properties for GaN. Comparing the top (Ga face) and bottom (N face) surfaces of grown semipolar (101¯3) GaN confirms the defect density reduction that is due to the application of interlayers. Moreover, reduced inversion domain density on the bottom surface is attributed with the insertion of interlayers. Improving the quality of semipolar GaN on Si(001) substrates is expected to be useful for GaN/Si(001) integrated optoelectronics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 454, 15 November 2016, Pages 114-120
Journal: Journal of Crystal Growth - Volume 454, 15 November 2016, Pages 114-120
نویسندگان
Ho-Jun Lee, Si-Young Bae, Kaddour Lekhal, Tadashi Mitsunari, Akira Tamura, Yoshio Honda, Hiroshi Amano,