Controlling the stress of growing GaN on 150-mm Si (111) in an AlN/GaN strained layer superlattice

The strain state in the AlN/GaN SLS was caused by the diffusion of Al from AlN into GaN in the SLS. The unintended AlGaN played a critical role in reducing the mismatch between the AlN and GaN layers, and efficiently accumulated stress without causing relaxation in the AlN/GaN SLS.