Growth of BxGa1−xAs, BxAl1−xAs and BxGa1−x−yInyAs epilayers on (0 0 1)GaAs by low pressure metalorganic chemical vapor deposition

High quality zinc-blende BxGa1−xAs, BxAl1−xAs, BxGa1−x−yInyAs and relevant MQW structures containing 10-period BGaAs/GaAs and BGaInAs/GaAs have been successfully grown on exactly-oriented (0 0 1)GaAs substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Triethylboron, trimethylgallium, trimethylaluminum, trimethylindium and arsine were used as the precursors. Boron incorporation behaviors have been studied as a function of growth temperature and gas-phase boron mole fraction.In this study, the maximum boron composition (x) of 5.8% and 1.3% was achieved at the same growth temperature of 580 °C for bulk BxGa1−xAs and BxAl1−xAs, respectively. 11 K photoluminescence (PL) peak wavelength of lattice-matched BxGa1−x−yInyAs epilayer with boron composition of about 4% reached 1.24 μm.