کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10411609 | 894761 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Output power enhancements of nitride-based light-emitting diodes with inverted pyramid sidewalls structure
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This study presents nitride-based light-emitting diodes (LEDs) with inverted pyramid sidewalls by chemical wet etching nitride epitaxial layers and investigates the chemical wet etching mechanism of inverted pyramid sidewalls. It is well known that chemical etching solutions such as KOH, H2SO4 and H3PO4, to selectively etch the N-face GaN but not the Ga-face GaN. In this study, the N-face GaN was exposed around the chip by laser scribing at the GaN/sapphire interface. These channels provided paths for the chemical etchant to flow and allow the etching solution to further contact with and etch the exposed bottom N-face GaN. Chemical etching of the chip sidewalls formed the inverted hexagonal pyramid shape with {10Â â1Â â1} facets. Findings show that inverted pyramid sidewalls enhance 20Â mA LED output power by 27% for LEDs, with chemical etching of the chip sidewalls for 4Â min, compared to the conventional LED. The larger LED output power is attributed to increased light extraction efficiency by inverted pyramid sidewalls.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 56, Issue 1, February 2011, Pages 8-12
Journal: Solid-State Electronics - Volume 56, Issue 1, February 2011, Pages 8-12
نویسندگان
Li-Chuan Chang, Cheng-Huang Kuo, Chi-Wen Kuo,