کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
657950 | 1458075 | 2013 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The novel chamber hardware design to improve the thin film deposition quality in both 12â³ (300Â mm) and 18â³ (450Â mm) wafers with the development of 3D full chamber modeling and experimental visual technique
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
جریان سیال و فرایندهای انتقال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The thin film deposition property and the process difference during the wafer size migration from 12â³ (300Â mm) to 18â³ (450Â mm) in the Chemical Vapor Deposition (CVD) equipment is improved and reduced, respectively, when the chamber hardware is designed with the help of 3D full chamber modeling and 3D experimental visual technique developed in this work. The accuracy of 3D chamber simulation model is demonstrated with the experimental visual technique measurement. With the CVD chamber hardware design of placing the inlet position and optimizing the distance between the susceptor edge and the reactor wall, the better thin film deposition property and the larger process compatibility during the wafer size migration from 12â³ (300Â mm) to 18â³ (450Â mm) for the industry cost reduction can be achieved. Non-dimensional Nusselt parameter is also found to be the effective indicator to monitor the thin film deposition property.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Heat and Mass Transfer - Volume 67, December 2013, Pages 393-397
Journal: International Journal of Heat and Mass Transfer - Volume 67, December 2013, Pages 393-397
نویسندگان
M.-H. Liao, C.-H. Chen, S.-C. Kao,