کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5370347 | 1388483 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
p-Type conduction in phosphorus-doped ZnO thin films by MOCVD and thermal activation of the dopant
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: p-Type conduction in phosphorus-doped ZnO thin films by MOCVD and thermal activation of the dopant p-Type conduction in phosphorus-doped ZnO thin films by MOCVD and thermal activation of the dopant](/preview/png/5370347.png)
چکیده انگلیسی
Phosphorus-doped p-type ZnO thin films have been realized by metalorganic chemical vapor deposition (MOCVD). The conduction type of ZnO films is greatly dependent on the growth temperature. ZnO films have the lowest resistivity of 11.3 Ωcm and the highest hole concentration of 8.84 Ã 1018 cmâ3 at 420 °C. When the growth temperature is higher than 440 °C, p-type ZnO films cannot be achieved. All the films exhibited p-type conduction after annealing, and the electrical properties were improved comparing with the as-grown samples. Secondary ion mass spectroscopy (SIMS) test proved that phosphorus (P) has been incorporated into ZnO.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 252, Issue 22, 15 September 2006, Pages 7953-7956
Journal: Applied Surface Science - Volume 252, Issue 22, 15 September 2006, Pages 7953-7956
نویسندگان
Yan Miao, Zhizhen Ye, Weizhong Xu, Fugang Chen, Xincui Zhou, Binghui Zhao, Liping Zhu, Jianguo Lu,