Defect structure originating from threading dislocations within the GaN film grown on a convex patterned sapphire substrate

We investigated defect structures in the GaN film grown on a convex patterned sapphire substrate (CPSS) to determine the origin of structural improvement by transmission electron microscopy (TEM) and laser confocal scanning microscopy (LCSM). From the TEM results, we found that most of the threading dislocations (TDs) in the trench region of the CPSS were bent by lateral growth mode. Also the staircase-like TDs were observed near the curved slant region of the convex pattern; they converged at the top of the convex patterned region by staircase-upward propagation. This scenario seems to effectively prevent TDs from vertical propagation in the trench region. The photoluminescence mapping and spectra obtained by LCSM are consistent with these results from TEM observations. The generation of staircase-like TDs relates to the formation of a terraced surface during the growth, and suggests a probable mechanism that changes the propagation direction of TDs via the curved surface of the CPSS. The lateral growth and staircase-upward propagation of TDs are major factors on structural improvement of the GaN film grown on CPSS.