کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1620480 | 1005735 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural and optical characterization of single-phase γ-In2Se3 films with room-temperature photoluminescence
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
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چکیده انگلیسی
The single-phase γ-In2Se3 films with red room-temperature photoluminescence (PL) have been realized by atmospheric metal-organic chemical vapor deposition at the temperature range of 350-500 °C. The crystal structure of the γ-In2Se3 films was determined by X-ray diffraction and Raman spectroscopy. From the temperature dependence of the free exciton line, the room-temperature energy gap of γ-In2Se3 films is found to be about 1.947 eV. At 10 K, the free exciton emissions was observed and located at 2.145 eV. The temperature dependence of the near band-edge emission in the temperature region of 10-300 K has been investigated. The measured peak energy of near band-edge emission redshifts by about 200 meV with increasing temperature from 10 to 300 K, and is expressed by, Eg(T) = 2.149 + ((â8.50 Ã 10â4)T2/(T + 75.5)) eV. This study was done to complete the reported information about γ-In2Se3 thin films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 499, Issue 1, 4 June 2010, Pages 104-107
Journal: Journal of Alloys and Compounds - Volume 499, Issue 1, 4 June 2010, Pages 104-107
نویسندگان
D.Y. Lyu, T.Y. Lin, T.W. Chang, S.M. Lan, T.N. Yang, C.C. Chiang, C.L. Chen, H.P. Chiang,