کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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5426863 | 1395910 | 2006 | 6 صفحه PDF | دانلود رایگان |

The (1Â 1Â 1)A and (1Â 1Â 1)B surfaces of GaAs chemically treated in HCl-isopropanol solution (HCl-iPA) and annealed in vacuum were studied by means of X-ray photoelectron spectroscopy (XPS), low-energy electron diffraction (LEED) and electron energy loss spectroscopy (EELS). To avoid uncontrolled contamination, chemical treatment and sample transfer into UHV were performed under pure nitrogen atmosphere. The HCl-iPA treatment removes gallium and arsenic oxides, with about 0.5-3Â ML of elemental arsenic being left on the surface, depending on the crystallographic orientation. With the increase of the annealing temperature, a sequence of reconstructions were identified by LEED: (1Â ÃÂ 1) and (2Â ÃÂ 2) on the (1Â 1Â 1)A surface and (1Â ÃÂ 1), (2Â ÃÂ 2), (1Â ÃÂ 1), (3Â ÃÂ 3), (â19Â ÃÂ â19) on the (1Â 1Â 1)B surface. These sequences of reconstructions correspond to the decrease of surface As concentration. The structural properties of chemically prepared GaAs(1Â 1Â 1) surfaces were found to be similar to those obtained by decapping of As-capped epitaxial layers.
Journal: Surface Science - Volume 600, Issue 3, 1 February 2006, Pages 577-582