کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1609458 | 1516256 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The roles of the temperature on the structural and electronic properties of deep-level VAsVGa defects in gallium arsenide
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The roles of the temperature on the structural and electronic properties of deep-level VAsVGa defects in gallium arsenide The roles of the temperature on the structural and electronic properties of deep-level VAsVGa defects in gallium arsenide](/preview/png/1609458.png)
چکیده انگلیسی
The roles of temperature on the structural and electronic properties of VAsVGa defects in gallium arsenide have been studied by using ab-initio molecular dynamic (MD) simulation. Our calculated results show that the relatively stable quaternary complex defect of GaAsAsGaVAsVGa can be converted from the VAsVGa complex clusters defect between 300Â K and 1173Â K; however, from 1173Â K to 1373Â K, the decomposition of the complex defect GaAsAsGaVAsVGa occurs, turning into a deep-level VAsVGa cluster defect and an isolated AsGa antisite defect, and relevant defect of GaAs is recovered. The properties of GaAsAsGaVAsVGa defect has been studied by first-principles calculations based on hybrid density functional theory. Our calculated results show that the GaAsAsGaVAsVGa belongs to EL2 deep-level defect in GaAs. Thus, we reveal that the temperature has an important effect on the microstructure of deep-level defects and defect energy level in gallium arsenide that EL2 and EL6 deep-level defects have a certain correlation, which means they could transform into each other. Controlling temperature in the growth process of GaAs could change the microstructure of deep-level defects and defect energy levels in gallium arsenide materials, whereby affects the electron transport properties of materials.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 637, 15 July 2015, Pages 16-19
Journal: Journal of Alloys and Compounds - Volume 637, 15 July 2015, Pages 16-19
نویسندگان
Deming Ma, Xi Chen, Hongbo Qiao, Wei Shi, Enling Li,