Optical properties of InAsSbN single quantum wells grown on InP substrates for 2-μm-wavelength region

► InAsSbN single quantum wells grown on InP substrates byMBE were studied. ► Optimum Sb composition is 2% in the case that the nitrogen composition is 1%. ► Laser operation was achieved for the InAsSbN SQW laser diode structure at 2.36 μm at 220 K.