کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8151179 1524436 2014 15 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Modeling and process control of MOCVD growth of InAlGaAs MQW structures on InP
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Modeling and process control of MOCVD growth of InAlGaAs MQW structures on InP
چکیده انگلیسی
We have developed a model which integrates calculation of InAlGaAs multiple quantum well (MQW) transition energies using the envelope function approximation with a statistical analysis of the PL emission wavelength, net strain and MQW period measured for a variety of MQW designs grown by MOCVD. The model relates the measured MQW parameters directly to MOCVD process parameters, allowing an accurate prediction of the process parameters required to grow a specified MQW design. This greatly reduces the need to grow and characterize individual calibration layers. The difference of the measured and predicted MQW parameters is recorded run-to-run over time, which allows process variability to be analyzed across a number of process parameters with intentional variations to grow different MQW designs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 393, 1 May 2014, Pages 81-84
نویسندگان
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