Structure optimization of 266 nm Al0.53GaN/Al0.75GaN SQW DUV-LD

A hypothetical design and investigation regarding an optimization of 266 nm DUV LD for Al0.53GaN/Al0.75GaN single quantum well had been reported. Where, an optical confining problem due to low refractive indexes of QW and QB that has a direct effect on the LD performance has been enhanced, via a narrow auxiliary optical confining layer. This hypothetical report pays attention to some insufficient and fully investigated parameters, thus our report represents valuable findings for future fabrication purposes.