Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A3. Physical vapor deposition processes; B1. Nanomaterials; B2. Semiconducting aluminum compounds; B2. Semiconducting silicon compounds;
مقالات ISI B2 ترکیبات نیمه هادی آلومینیوم (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A1. Crystal morphology; A1. Recrystallization; A3. Physical vapor deposition processes; A3. Solid phase epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds;
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A3. Chemical vapor deposition processes; A3. Physical vapor deposition processes; B2. Semiconducting aluminum compounds; B2. Semiconducting silicon compounds
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A1. Characterization; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting aluminum compounds
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A1. Nucleation islands; A1. Surface structure; A1. Atomic force microscopy; A3. Metalorganic chemical vapor deposition; B2. Semiconducting aluminum compounds;
Structure optimization of 266â¯nm Al0.53GaN/Al0.75GaN SQW DUV-LD
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; B2. Semiconducting aluminum compounds; B3. Laser diodes; B3. Heterojunction semiconductor devices; A3. Quantum wells;
MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A1. Polarity; A1. X-ray diffraction; A3. Metal-organic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds;
MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A1. Polarity; A1. X-ray diffraction; A3. Metal-organic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds;
Physical vapor transport growth of bulk Al1âxScxN single crystals
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A2. Growth from vapor; A2. Single crystal growth; B1. Nitrides; B2. Semiconducting aluminum compounds; Scandium aluminum nitride; Physical vapor transport; Sublimation; Substrate;
Defect structure of high temperature hydride vapor phase epitaxy-grown epitaxial (0Â 0Â 0Â 1) AlN/sapphire using growth mode modification process
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A1. Defects; B1. Nitrides; A3. Hydride vapor phase epitaxy; A1. Characterization; A1. Growth models; B2. Semiconducting aluminum compounds;
Hot-wall low pressure chemical vapor deposition growth and characterization of AlN thin films
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A3. Hot wall epitaxy; A3. Low press. metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials; B2. Piezoelectric materials; B2. Semiconducting aluminum compounds;
Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A1. X-ray diffraction; A3. Atomic layer epitaxy; B1. Nitrides; B2. Semiconducting III-V materials; B2. Semiconducting aluminum compounds;
Influence of high-temperature processing on the surface properties of bulk AlN substrates
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A1. Impurities; A2. Point defects; A3. Hydride vapor phase epitaxy; B1. Nitrides; B1. Quartz; B2. Semiconducting aluminum compounds
Effect of V/III ratio on the growth of (112¯2) AlGaN by metalorganic vapour phase epitaxy
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A3. Metalorganic vapour phase epitaxy; B1. Nitrides; B2. AlGaN; B2. Semiconducting aluminum compounds;
High indium content homogenous InAlN layers grown by plasma-assisted molecular beam epitaxy
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A1. Atomic force microscope; A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting indium compounds; B2. Semiconducting aluminum compounds;
Single phase (112¯2) AlN grown on (101¯0) sapphire by metalorganic vapour phase epitaxy
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A3. Metalorganic vapour phase epitaxy; B1. Nitrides; B2. AlN; B2. Semiconducting aluminum compounds
Polarity control of AlN layers grown on sapphire substrates by oxygen doping during AlN nucleation
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A1. Crystal structure; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting aluminum compounds;
Reduction of threading dislocations in N-polar GaN using a pseudomorphicaly grown graded-Al-fraction AlGaN interlayer
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A1. Interfaces; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III–V materials; B2. Semiconducting aluminum compounds
AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A1. Defects; A3. Epitaxial lateral overgrowth; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting aluminum compounds;
Homoepitaxial growth of AlN layers on freestanding AlN substrate by metalorganic vapor phase epitaxy
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A1. Crystallites; A1. Crystal morphology; A3. Semiconducting III–V material; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting aluminum compounds
Hydride vapor phase epitaxy of AlN using a high temperature hot-wall reactor
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A1. High resolution X-ray diffraction; A1. Substrates; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds;
AlN heteroepitaxy on sapphire by metalorganic vapour phase epitaxy using low temperature nucleation layers
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A1. Atomic force microscopy; A1. High resolution X-ray diffraction; A3. Metalorganic vapour phase epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds; B2. Semiconducting III-V materials;
Purification of Al(OH)3 synthesized by Bayer process for preparation of high purity alumina as sapphire raw material
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A1. Purification; A2. Industrial crystallization; B2. Semiconducting aluminum compounds; B3. Light emitting diodes
Influence of sputtering parameters on structures and residual stress of AlN films deposited by DC reactive magnetron sputtering at room temperature
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A1. X-ray diffraction; B1. Nitrides; B2. Acousto-optic materials; B2. Piezoelectric materials; B2. Semiconducting aluminum compounds
Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001) sapphire substrates
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A1. Characterization; A3. Hydride vapor phase epitaxy; B1. Nitrides; B1. Sapphire; B2. Semiconducting aluminum compounds
Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A1. Desorption; A3. Migration enhanced epitaxy; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds;
Preparation of freestanding AlN substrates by hydride vapor phase epitaxy using hybrid seed substrates
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A1. Crystal structure; A2. Seed crystals; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds;
Formation of AlN on sapphire surfaces by high-temperature heating in a mixed flow of H2 and N2
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A1. Surface processes; A3. Chemical vapor deposition processes; B1. Nitrides; B1. Sapphire; B2. Semiconducting aluminum compounds;
Hydride vapor phase epitaxy of high structural perfection thick AlN layers on off-axis 6H-SiC
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A1. Crystal structure; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds
Fabrication and characterization of AlP-GaP core-shell nanowires
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A1. Nanostructures; A1. Crystal structure; A3. Low press; Metalorganic vapor phase epitaxy; B1. Nanomaterials; B2. Semiconducting aluminum compounds; B2. Semiconducting III–V materials
Intersubband transition at 1.55 μm in AlN/GaN multiple quantum wells by metal organic vapor phase epitaxy using the pulse injection method at 770 °C
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A1. MOVPE; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds; B2. Semiconducting gallium compounds
Numerical investigation of pulsed chemical vapor deposition of aluminum nitride to reduce particle formation
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A1. Computer simulation; A1. Growth Models; A3. Metalorganic Chemical Vapor Deposition; B1. Nitrides; B2. Semiconducting Aluminum Compounds; B2. Semiconducting III-V Materials
Understanding the cubic AlN growth plane from first principles
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A1. Growth models; A1. Surface structure; A1. Computer simulation; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds;
Crystal growth of mixed AlN–SiC bulk crystals
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A1. Solid solutions; A2. Growth from vapor; B1. Alloys; B1. Nitrides; B2. Semiconducting aluminum compounds
Growth and characterization of Mg-doped AlGaN–AlN short-period superlattices for deep-UV optoelectronic devices
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A3. Metalorganic chemical vapor deposition; A3. Superlattices; B1. Nitrides; B2. Semiconducting aluminum compounds; B2. AlGaN
Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; A1. Interfaces; A1. Substrates; A3. Hydride vapor phase epitaxy; B1. Nitrides; B1. Sapphire; B2. Semiconducting aluminum compounds
HRTEM investigation of high-reflectance AlN/GaN distributed Bragg-reflectors by inserting AlN/GaN superlattice
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; 61.82.Fk; 68.65.Fg; 81.15.GhA1. Characterization; A3. Metal-organic chemical vapor deposition; A3. Quantum wells; B1. Nitrides; B2. Semiconducting aluminum compounds; B3. Laser diodes
In situ gravimetric monitoring of surface reactions between sapphire and NH3
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; 68.43.Vx; 68.55.−a; 68.60.Dv; 81.05.Ea; 81.65.Lp; 82.30.LpA1. Surface processes; A1. Morphological stability; A3. Vapor-phase epitaxy; B1. Nitrides; B1. Sapphire; B2. Semiconducting aluminum compounds
Effect of indium on the physical vapor transport growth of AlN
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; 81.05.Ea; 81.10.hA2. Physical vapor transport growth; A2. Seed crystals; A2. Single crystal growth; B1. Nitrides; B2. Aluminum nitride; B2. Semiconducting aluminum compounds
Process design of the pulse injection method for low-temperature metal organic vapor phase epitaxial growth of AlN at 800 °C
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; 81.10.−h; 61.72.−y; 61.72.sd; 61.72.uj; 72.85.JyA1. Crystal morphology; A1. Crystal structure; A3. Metalorganic vapor phase epitaxy; B1. Nitride; B2. Semiconducting aluminum compounds
AlGaAs/InGaP interfaces in structures prepared by MOVPE
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; 81.05.Ea; 81.15.Gh; 68.35.CtA1. Interfaces; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting indium gallium phosphide; B2. Semiconducting aluminum compounds; B2. Semiconducting gallium compounds
Characterization of bulk AlN crystals with positron annihilation spectroscopy
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; 61.72.jd; 71.55.Eq; 78.70.Bj; 81.10.BkA1. Characterization; A1. Point defects; A2. Growth from vapor; B1. Nitrides; B2. Semiconducting aluminum compounds
AlN bandgap temperature dependence from its optical properties
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; B1. Nitrides; B2. Semiconducting aluminum compounds; B2. Semiconducting materials
High-temperature growth of thick AlN layers on sapphire (0 0 0 1) substrates by solid source halide vapor-phase epitaxy
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; 81.05.Ea; 81.10.Bk; 81.15.Kk; 71.55.−iA3. Vapor-phase epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds
Structural and surface characterization of large diameter, crystalline AlN substrates for device fabrication
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; 81.05Ea; 81.10BkA1. Substrates; A2. Bulk crystal growth; B1. Nitrides; B2. Semiconducting aluminum compounds; B2. Semiconducting III–V materials
Native oxide and hydroxides and their implications for bulk AlN crystal growth
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; 81.05.Ea; 81.10.Bk; 81.20.YmA1. Impurities; A1. Purification; A2. Growth from vapors; B1. Nitrides; B2. Semiconducting aluminum compounds
High-reflectivity ultraviolet AlN/AlGaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; 78.55.Cr; 61.66.Dk; 68.55.Jk; 78.66.FdA1. Crystal morphology; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting aluminum compounds
Polarities of AlN films and underlying 3C-SiC intermediate layers grown on (1 1 1) Si substrates
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; 61.14.Lj; 72.80.Ey; 81.05.−tA1. Crystal structure; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds
Characterization of AlN:Mn thin film phosphors prepared by metalorganic chemical vapor deposition
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; 68.55.Jk; 68.55.Ln; 78.60.Hk; 78.66.Fd; 81.15.GhA1. Characterization; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Phosphors; B2. Semiconducting aluminum compounds
MOVPE-like HVPE of AlN using solid aluminum trichloride source
Keywords: B2 ترکیبات نیمه هادی آلومینیوم; 61.10.Nz; 68.55.Jk; 81.05.Ea; 81.15.KkA3. Vapor-phase epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds