کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1790535 | 1524434 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We report high-performance AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates (NPSS) using metalâorganic chemical vapor deposition. By nanoscale epitaxial lateral overgrowth on NPSS, 4-μm AlN buffer layer has shown strain relaxation and a coalescence thickness of only 2.5 μm. The full widths at half-maximum of X-ray diffraction (002) and (102) Ï-scan rocking curves of AlN on NPSS are only 69.4 and 319.1 arcsec. The threading dislocation density in AlGaN-based multi-quantum wells, which are grown on this AlN/NPSS template with a light-emitting wavelength at 283 nm at room temperature, is reduced by 33% compared with that on flat sapphire substrate indicated by atomic force microscopy measurements, and the internal quantum efficiency increases from 30% to 43% revealed by temperature-dependent photoluminescent measurement.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 395, 1 June 2014, Pages 9-13
Journal: Journal of Crystal Growth - Volume 395, 1 June 2014, Pages 9-13
نویسندگان
Peng Dong, Jianchang Yan, Yun Zhang, Junxi Wang, Jianping Zeng, Chong Geng, Peipei Cong, Lili Sun, Tongbo Wei, Lixia Zhao, Qingfeng Yan, Chenguang He, Zhixin Qin, Jinmin Li,