کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1794545 1023701 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Polarities of AlN films and underlying 3C-SiC intermediate layers grown on (1 1 1) Si substrates
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Polarities of AlN films and underlying 3C-SiC intermediate layers grown on (1 1 1) Si substrates
چکیده انگلیسی

The hydride vapor phase epitaxy (HVPE) of {0 0 0 1} AlN films on {1 1 1} Si substrates covered with epitaxial {1 1 1} cubic SiC (3C-SiC intermediate layers) was carried out. 3C-SiC intermediate layers are essential to obtain high-quality AlN films on Si substrates, because specular AlN films are obtained with 3C-SiC intermediate layers, whereas rough AlN films are obtained without 3C-SiC intermediate layers. We determined the polarities of AlN films and the underlying 3C-SiC intermediate layers by convergent beam electron diffraction (CBED) using transmission electron microscopy. For the first time, the polarities of the AlN films and the 3C-SiC intermediate layers were determined as Al and Si polarities, respectively. The AlN films were hardly etched by aqueous KOH solution, thereby indicating Al polarity. This supports the results obtained by CBED. The result is also consistent with electrostatic arguments. An interfacial structure was proposed. The 3C-SiC intermediate layers are promising for the HVPE of AlN films on Si substrates.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 310, Issue 1, 4 January 2008, Pages 96–100
نویسندگان
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