Keywords: 72.80.ییییی; 71.45.Gm; 71.38.−k; 72.80.Ey; 74.25.N−; 61.85.+pMulti-component plasma; Hot carriers; Dielectric response functions; Wurtzite GaN
مقالات ISI 72.80.ییییی (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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Electron interference effects and strong localization in Cu doped ZnO thin films
Keywords: 72.80.ییییی; 72.20.Ee; 72.15.Rn; 72.80.Ey; Electrical properties; Semiconductors; Cu doped ZnO; Quantum corrections;
Ballistic transport at GHz frequencies in ungated HEMT structures
Keywords: 72.80.ییییی; 71.10.Ca; 71.55.Ed; 72.20.Dp; 72.80.Ey; 73.23.âb; 73.40.Cg; Ballistic transport; 2d electron gas;
Physical properties of Sb-doped CdSe thin films by thermal evaporation method
Keywords: 72.80.ییییی; 61.72.uj; 72.80.Ey; 81.05.Dz; 71.55.Gs; 73.61.Ga; 78.66.Hf; II-VI compounds; Thermal evaporation method; Antimony doping; Physical characterizations;
Investigation of the effects of atomic oxygen exposure on the electrical and field emission properties of ZnO nanowires
Keywords: 72.80.ییییی; ZnO; Thermal oxidation; Field emission; Conductivity; 61.72.uj; 64.75.Lm; 79.70.+q; 72.80.Ey;
Investigation of p-type behavior in Ag-doped ZnO thin films by E-beam evaporation
Keywords: 72.80.ییییی; 72.80.Ey; 73.61.Ga; 78.55.Et; ZnO; Ag doping; Photoluminescence; p-Type; E-beam evaporation;
Single crystal growth and properties of the γ-phase in the CuInSe2-2CdTe system
Keywords: 72.80.ییییی; 61.66.Fn; 81.10.Fq; 72.80.Ey; A1. Phase diagrams; A1. Solid solutions; A2. Bridgman technique; B2. CuInSe2; B2. CdTe; B3. Solar cells;
Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits
Keywords: 72.80.ییییی; 72.80.Ey; 73.61.Ey; 81.05.Ea; 85.30.TvA3. Molecular beam epitaxy; A3. Quantum wells; B2. Semiconducting III–V materials; B3. Field-effect transistors; B3. High electron mobility transistors
A facile route to arsenic-doped p-type ZnO films
Keywords: 72.80.ییییی; 61.72.Uj; 72.80.Ey; 73.61.Ga; 78.55.EtA1. Diffusion; A1. Doping; A3. Molecular beam epitaxy; B2. Semiconducting II–VI materials
Temperature-dependent negative photoconductivity of undoped ZnO films
Keywords: 72.80.ییییی; 72.40.+w; 72.80.Ey; 73.20.HbZinc oxide; Negative photoconductivity; Defect states; Grain boundary; Sputtering; Scanning Electron Microscopy
MBE growth of ultra-low disorder 2DEG with mobility exceeding 35×106 cm2/V s
Keywords: 72.80.ییییی; 72.80.Ey; 73.21.Fg; 73.21.Cd; 73.23.Ad; 73.43.QtA1. Low-dimensional structures; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide
Hall effect and magnetoresistance analysis by electron-hole coexisting model in AlInSb/InAsSb quantum wells
Keywords: 72.80.ییییی; 72.80.Ey; 73.61.Ey; 73.63.Hs; A1. Characterization; A3. Molecular beam epitaxy; B2. Semiconducting indium compounds; B2. InAs; B2. InAsSb; B2. InSb;
MOVPE of AlN-free hexagonal GaN/cubic SiC/Si heterostructures for vertical devices
Keywords: 72.80.ییییی; 61.14.Lj; 72.80.Ey; 81.05.−tA1. Crystal structure; A3. Metalorganic vapor phase epitaxy; B1. Nitrides
Persistent photoconductivity of ZnO
Keywords: 72.80.ییییی; 72.20.Jv; 72.80.Ey; 76.30.Lh; 78.55.EtZno; Photoconductivity; Electron paramagnetic resonance
Metastability of defects, potential fluctuations, and percolation transition in GaAs
Keywords: 72.80.ییییی; 71.55.Eq; 72.80.Ey; 78.55.Cr; A. Semiconductor; D. Metastable defects;
Reflectance magnetic circular dichroism studies at the Γ-point in InMnAs semiconductor films
Keywords: 72.80.ییییی; 72.80.Ey; 75.50.Pp; 78.66.FdSpintronics; Dilute magnetic semiconductors; Indium manganese arsenide; Magnetic circular dichroism
A first-principles study of dual acceptors behaviors in Mn δ-doped digital ferromagnetic heterostructures
Keywords: 72.80.ییییی; 75.70.Cn; 75.50.Pp; 75.30.-m; 72.80.Ey; C. Dual acceptors; C. Heterostructures; D. Half-metallicity; E. First principles;
The geometric structure influence on the ferromagnetism in Carbon-doped anatase TiO2: First-principles study
Keywords: 72.80.ییییی; 75.70.Cn; 75.50.Pp; 75.30.-m; 72.80.Ey; A. Ferromagnetism; C. Supercell; D. Half-metallicity; E. First-principle;
Structural, electrical, optical and magnetic properties of Co0.2AlxZn0.8âxO films
Keywords: 72.80.ییییی; 71.55.Eq; 72.80.Ey; 73.61.Ga; 75.70.âi; 78.55.Et; Photoluminescence; Zinc oxide; X-ray diffraction; Magnesium; Oxides;
Fabrication and thermal evolution of nanoparticles in SiO2 by Zn ion implantation
Keywords: 72.80.ییییی; 61.46.−w; 68.37.Ps; 72.80.Ey; 73.63.Bd; 81.16.Pr; 82.80.EjA1. X-ray diffraction; A1. Atomic force microscopy; B1. Nanomaterials; B1. Zinc compounds; B1. Oxides; B2. Semiconducting II–VI materials
Effects of processing on the electrical and structural properties of spray deposited CdS:In thin films
Keywords: 72.80.ییییی; 68.37.-d; 61.05.cp; 71.55.Gs; 72.40.+w; 72.80.Ey; 73.61.âr; Annealing; Cadmium sulfide; Etching; Semiconductors;
PdSi based ohmic contact on n-InP
Keywords: 72.80.ییییی; 72.15.Eb; 72.80.Ey; 73.40.Cg; 73.40.Ns; Ohmic contact; Specific contact resistance; Pd3In; Pd3Si;
Study of the influence of the rare-earth elements on the properties of lead iodide
Keywords: 72.80.ییییی; 72.80.Ey; 78.55.Cr; 81.05.Hd; 81.10.Fq; 81.15.Lm; 81.20.YmA1. Characterization; A1. Doping; A1. Purification; A2. Zone melting; A2. Bridgman–Stockbarger technique; B3. Semiconducting materials
Stable aluminium ohmic contact to surface modified porous silicon
Keywords: 72.80.ییییی; 81.65.Rv; 84.37.+q; 73.40.Cg; 73.20.−r; 72.80.Ey; 61.46.HkPorous silicon; Surface modification; Palladium metal; Ohmic contact; Stability
The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si(1 1 1) substrates by MOCVD
Keywords: 72.80.ییییی; 61.10.Nz; 68.37.Ps; 72.80.Ey; 78.55.CrB1. GaN; B1. AlN layer; B1. Step graded AlGaN; A3. MOCVD; B1. Silicon substrates; B1. Intermediate layer
Evolution of growth and enhancement in power factor of InSb bulk crystal
Keywords: 72.80.ییییی; 71.55.Eq; 72.15.Jf; 72.80.Ey; 72.20.PaA2. Bridgman technique; B1. Antimonides; B2. Semiconducting indium compounds
Adaptive interferometers with no external field using reflection gratings in CdTe:Ge at 1550Â nm
Keywords: 72.80.ییییی; 42.65.Hw; 42.68.Wt; 42.70.Nq; 72.80.Ey; Adaptive interferometer; Homodyne detection; Cadmium telluride; Photorefractive semiconductors;
Electronic structure of layer type tungsten metal dichalcogenides WX2 (X = S, Se) using Compton spectroscopy: Theory and experiment
Keywords: 72.80.ییییی; 13.60.Fz; 71.15.Ap; 72.80.Ey; 78.70.CkTransition-metal alloys and compounds; Electronic band structure; X-ray and gamma-ray spectroscopies
Effect of electrically degenerated layer on the carrier transport property of ZnO epitaxial thin films
Keywords: 72.80.ییییی; 73.61.Ga; 72.80.Ey; ZnO; Lattice mismatch; Degenerated layer; Double Schottky barrier;
Dark electrical conductivity and photoconductivity of Ga4Se3S layered single crystals
Keywords: 72.80.ییییی; 72.20.Jv; 72.80.Ey; 78.20.Jq; 78.20.Nv; 71.23.An; 71.55.Cn; 72.10.Di; 72.20.Dp; 72.20.NrA. Semiconductors; B. Crystal growth; D. Electrical conductivity
Elasticity, band structure, and piezoelectricity of BexZn1−xO alloys
Keywords: 72.80.ییییی; 72.80.Ey; 77.65.-j; 62.20.DcFirst-principles; Bowing coefficients; Piezoelectricity; Alloys; Elasticity; Semiconductor
Intersubband transition in symmetric AlxGa1 â xN/GaN double quantum wells with applied electric field
Keywords: 72.80.ییییی; 72.80.Ey; 73.21.Fg; 03.65.Ge; Intersubband transition; Double quantum well; Applied electric field;
Unusual electronic properties of InN
Keywords: 72.80.ییییی; 13.60.Fz; 71.15.Ap; 72.80.Ey; 78.70.Ck; X-ray scattering; Band structure calculation; Density functional theory;
Role of new ohmic electrode metallization in detection performance of bulk semi-insulating GaAs radiation detectors
Keywords: 72.80.ییییی; 29.40.−n; 72.80.Ey; 29.40.WkSemi-insulating; GaAs; Radiation detector; Ohmic metallization
Thickness-dependent electronic and optical properties of faceted hexagonal aluminum nitride nanotubes
Keywords: 72.80.ییییی; 72.80.Ey; 73.22.–f; 74.25.Gz; 74.25.JbAlN nanotubes; Hexagonal cross-sections; Electronic properties; Optical properties; Thickness-dependence
Enhanced performances of ZnO-TFT by improving surface properties of channel layer
Keywords: 72.80.ییییی; 73.61.Ga; 72.80.Ey; 81.15.CdA. Thin film transistor; A. ZnO; B. RF sputtering; C. Surface morphology
Persistent photoconductivity in InAsN/InGaAs quantum wells
Keywords: 72.80.ییییی; 72.20.Jv; 72.40.+w; 72.80.Ey; A. Quantum well; A. Semiconductors; D. Photoluminescence; D. Photoconductivity;
Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition
Keywords: 72.80.ییییی; 72.80.Ey; 73.20.Hb; 73.40.-cAluminium gallium nitride/gallium nitride; Quantitative mobility spectrum analysis; Two-dimensional electron gas; Two-dimensional hole gas
The Meyer–Neldel rule in sol–gel derived polycrystalline ZnO:Al thin films
Keywords: 72.80.ییییی; 72.80.Ey; 73.50.Bk; 73.50.-hA. ZnO thin film; B. Sol–gel process; D. Electronic transport; D. Al doping
Transparent Ga-doped zinc oxide-based window heaters fabricated by pulsed laser deposition
Keywords: 72.80.ییییی; 73.61.Ga; 72.80.Ey; 78.20.−e; 68.55.LnA1. Doping; A1. Defects; A1. Impurities; B2. Semiconducting II–VI materials
Electron irradiation induced defects in undoped and Te doped gallium phosphide
Keywords: 72.80.ییییی; 61.80.Jh; 72.40.Cw; 72.23.Ra; 72.80.Ey; A. Semiconductors; D. Photoconductivity; D. Recombination and trapping; E. Photoelectron spectroscopy;
Polarities of AlN films and underlying 3C-SiC intermediate layers grown on (1 1 1) Si substrates
Keywords: 72.80.ییییی; 61.14.Lj; 72.80.Ey; 81.05.−tA1. Crystal structure; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds
Annealing effect on structural and electrical properties of thermally evaporated Cd1−xMnxS nanocrystalline films
Keywords: 72.80.ییییی; 72.80.Ey; 73.61.Ga; 61.10.Nz; 68.55.−aC. Atomic force microscopy; D. Electrical properties
Growth and characterization of the ZnO/ZnS bilayer obtained by chemical spray pyrolysis
Keywords: 72.80.ییییی; 71.55.Gs; 72.80.Ey; 78.20.Bh; Interface; Inorganic compounds; Sulphides; Semiconducting II-VI; Bilayers;
Electronic structure of some mercury chalcogenides using Compton spectroscopy
Keywords: 72.80.ییییی; 13.60.Fz; 71.15.Ap; 72.80.Ey; 78.70.Ck; Compton scattering; Density functional theory; II-VI semiconductors; Electron momentum density;
Growth of dilute nitride alloys of GaInSb lattice-matched to GaSb
Keywords: 72.80.ییییی; 72.80.Ey; 73.61.Ey; 81.05.EaA1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III–V materials
Advances in numerical simulation of wide-bandgap bulk crystal growth
Keywords: 72.80.ییییی; 81.10.Aj; 81.10.Bk; 72.80.Ey; 02.60.Cb; Sublimation growth; SiC; Group-III nitrides; Numerical modeling; Heat and mass transport;
Formation of low-resistance and transparent indium tin oxide ohmic contact for high-brightness GaN-based light-emitting diodes using a Sn–Ag interlayer
Keywords: 72.80.ییییی; 72.80.Ey; 73.40.Cg; 73.20.At; 79.60.BmOhmic contact; GaN; Indium tin oxide; Light-emitting diode; Ag–Sn alloy
Effects of Ga ion irradiation on growth of GaN on SiN substrates by electron cyclotron resonance-assisted molecular beam epitaxy
Keywords: 72.80.ییییی; 41.75.âi; 72.80.Ey; 81.15.Hi; Gallium nitride; Silicon nitride; Gallium; Ion implantation; Crystal growth; Electron cyclotron resonance; Molecular beam epitaxy;
1-mm gate periphery AlGaN/AlN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz
Keywords: 72.80.ییییی; 72.80.Ey; 81.05.Ea; 81.15.Gh; 85.30.TvAlGaN/GaN; HEMT; MOCVD; Power device; SiC substrates