Electron irradiation induced defects in undoped and Te doped gallium phosphide

The aim of the present work is to investigate defects that are introduced to Gallium Phosphide (GaP) by electron irradiation as well as their dependence on the background doping. Undoped and Te doped n-type GaP have been irradiated with 1.5 MeV electrons at fluences of 5×1016 e/cm2. Deep level transient spectroscopy assessment revealed the dependence of the trap characteristics on background doping.