کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1594637 | 1515669 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Metastability of defects, potential fluctuations, and percolation transition in GaAs
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Metastability of defects, potential fluctuations, and percolation transition in GaAs Metastability of defects, potential fluctuations, and percolation transition in GaAs](/preview/png/1594637.png)
چکیده انگلیسی
Potential fluctuations due to donor-acceptor compensation have been used to observe localization-delocalization transition in semi-insulating GaAs. Photoinduced transients, resulting from relaxation of stored charges in potential valleys, have two components. The long-lived power law decay at low temperature signifies a microscopically inhomogeneous disordered phase, and single exponential decay at a higher temperature signifies a homogeneous ordered phase. Temperature dependence of steady state photocurrent and kinetics of photocurrent decay suggest percolation as a possible mechanism for photoinduced transition in semi-insulating GaAs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 149, Issues 43â44, November 2009, Pages 1884-1887
Journal: Solid State Communications - Volume 149, Issues 43â44, November 2009, Pages 1884-1887
نویسندگان
D. Kabiraj, Subhasis Ghosh,