Physical properties of Sb-doped CdSe thin films by thermal evaporation method

Cadmium selenide (CdSe) thin films were deposited on the glass substrates by using the resistive thermal evaporation method in the vacuum chamber. The effect of antimony doping on the physical properties of CdSe thin film has been investigated. The structural and surface properties such as lattice parameters, grain size, microstrain and dislocation density of the thin films were characterized by X-ray diffraction (XRD) technique. The compositional properties were studied by the mean of Rutherford backscattering (RBS) and UV-Vis-NIR spectrophotometer used to determine the refractive index, absorption coefficient and optical energy band gap of thin films. The FTIR absorption spectra confirmed the presence of CdSe vibrational mode in the range 400 cm−1 to 700 cm−1. The electrical conductivity of the films was carried out with the help of impedance analyzer, which has been increased up to 1% on Sb doping. The transmission has been reduced up to 18% with the increase in Sb doping and shifted toward lower wavelengths