کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
753746 1462271 2017 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ballistic transport at GHz frequencies in ungated HEMT structures
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Ballistic transport at GHz frequencies in ungated HEMT structures
چکیده انگلیسی
By measuring the ac impedance, we measure for the first time the crossover from diffusive (ωτ<1) to ballistic (ωτ>1) transport as a function of frequency (dc to 5 GHz) in a dc contacted 2d electron gas in the low electric field limit, where τ is the momentum scattering time. The geometry is an “ungated HEMT”, meaning current flows through an ohmic contact into a 2d electron gas, laterally through the 2d electron gas, and out into a second ohmic contact; the 2d electron gas itself is not gated. At the measurement temperature (4.2 K), the low field mobility is 3.2 × 106 cm2/V s. We also measure for the first time the frequency dependent contact impedance in this ballistic limit.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 48, Issues 10–11, October–November 2004, Pages 2013-2017
نویسندگان
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