Keywords: 73.40.Cg; 73.40.-c; 73.40.Ns; n-GaN; p-GaN; AlGaN/GaN heterostructures; Ohmic contacts;
مقالات ISI (ترجمه نشده)
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Ballistic transport at GHz frequencies in ungated HEMT structures
Keywords: 71.10.Ca; 71.55.Ed; 72.20.Dp; 72.80.Ey; 73.23.âb; 73.40.Cg; Ballistic transport; 2d electron gas;
Studies of resistance switching effects in metal/YBa2Cu3O7âx interface junctions
Keywords: 74.25.Fâ; 73.40.Cg; 74.55.+v; Resistive switching effect; STM; Planar junction; Superconductivity;
Specific contact resistance and carrier tunneling properties of the silver metal/porous silicon/p-Si ohmic contact structure
Keywords: 73.63.−b; 73.40.Cg; 73.43.JnOptical materials; Ohmic contact; Sintering; Contact potential; Tunneling
NiP:Mn as a potential magnetic contacting material to Cd1âxMnxTe
Keywords: 85.75.-d; 81.05.Dz; 73.40.Cg; Cd1âxMnxTe; Ohmic contact; Electroless deposition; NiP:Mn;
Ohmic contacts on n-type layers formed in GaN/AlGaN/GaN by dual-energy Si ion implantation
Keywords: 61.72.Ww; 85.40.Ls; 73.40.Cg; 85.40.Ry; Ohmic contacts; Ion implantation; GaN/AlGaN/GaN; HEMT;
Fabrication and electrical characterization of Au/p-Si/STO/Au contact
Keywords: 73.40.Cg; 73.40.Ei; 73.40.Ns; 73.61.-r; 73.61.JcStrontium titanate; Pulsed laser; Thin films; Barrier height; Ideality factor
Solution-processed organic field-effect transistors composed of poly(4-styrene sulfonate) wrapped multiwalled carbon nanotube source/drain electrodes
Keywords: 73.40.Cg; 79.60.-i; 61.10.-i; 72.80.LeOrganic transistor; Carbon nanotube; Multiwalled carbon nanotube; MWNT; OFET; Solution-processed
Bottom gate organic thin-film transistors fabricated by ultraviolet transfer embossing with improved device performance
Keywords: 73.40.Cg; 73.40.Sx; 73.61.PhOrganic field-effect transistors; Organic thin-film transistors; UV embossing; Transfer embossing; Dielectric-semiconductor interface; Cross-linking; Printable; Large-area; Flexible
PdSi based ohmic contact on n-InP
Keywords: 72.15.Eb; 72.80.Ey; 73.40.Cg; 73.40.Ns; Ohmic contact; Specific contact resistance; Pd3In; Pd3Si;
Solution-processed single walled carbon nanotube electrodes for organic thin-film transistors
Keywords: 72.80.Le; 73.40.Cg; 73.61.Ph; 73.63.FgOrganic thin-film transistor; Carbon nanotube; Pentacene; Poly-3-hexylthiophene; Contact resistance; Transparent electrode
Surface modification of TiO2 by a self-assembly monolayer in inverted-type polymer light-emitting devices
Keywords: 73.40.RW; 73.40.Cg; 73.61.Ph; 73.30.+y; 81.65.−bPolymer light-emitting diode; TiO2; Self-assembly monolayer
Stable aluminium ohmic contact to surface modified porous silicon
Keywords: 81.65.Rv; 84.37.+q; 73.40.Cg; 73.20.−r; 72.80.Ey; 61.46.HkPorous silicon; Surface modification; Palladium metal; Ohmic contact; Stability
Contact effects in organic thin-film transistor sensors
Keywords: 72.80.Le; 73.40.Cg; 85.30.Tv; 87.85.fkThin films; Transistors; Chemo-bio sensors; Conducting polymers; Molecular electronics
Strained-Si with carbon incorporation for MOSFET source/drain engineering
Keywords: 73.20.âr; 73.20.Jc; 73.20.At; 73.40.Cg; 73.40.Qv; Strained-Si:C; Methysilane; Strain;
Au/p-diamond ohmic contacts deposited by RF sputtering
Keywords: 73.40.Ns; 73.40.Cg; Structural investigation; Ohmic contact; Diamond film; Circular transmission line model;
Electrical characterization of thiols self-assembled layers on GaP (1 1 1) structures
Keywords: 71.55.Eq; 73.21.Ac; 73.40.Ei; 73.40.Qv; 73.40.Cg; 81.65.RvGallium-phosphide (GaP); Thiols; Current–voltage characteristics; SEM analysis
Microscopic study of the H2O vapor treatment of the silicon grain boundaries
Keywords: 73.50.−h; 73.40.−c; 67.80.Mg; 73.40.Cg; 73.40.Mg; 81.40.−zPolycrystalline silicon films; H2O vapor treatment; Potential; Crystalline disorder; Stress; Defects; Passivation; Micro Raman spectroscopy; Kelvin force microscopy
Interface metallization and electrical characterization of Ta-Pt multilayers on n-type SiC
Keywords: 68.55.âa; 73.40.Cg; SiC; Ohmic contact; Ta; Pt; Carbon vacancy;
First-principles study of transport of V doped boron nitride nanotube
Keywords: 72.15.Jf; 85.65.+h; 73.40.Cg; 71.15.MbFirst-principles; One-dimensional; Tunnel magnetoresistance; Spin filter
All-printed low-voltage organic transistors
Keywords: 73.30.+y; 73.40.Cg; 73.61.Ph; 85.30.TvAll-printed; Roll-to-roll manufacturing; Reel-to-reel; R2R; Low-voltage; Ink-jet printing; Reverse gravure coating; Roll coating; Organic transistors; Field-effect transistors; Thin-film transistors; Ion modulated
Reducing the contact resistance in organic thin-film transistors by introducing a PEDOT:PSS hole-injection layer
Keywords: 73.40.Cg; 79.60.-i; 61.10.-i; 72.80.LeOrganic transistor; OFET; Contact resistance; Injection barrier; Pentacene; UPS; GIXD
Influence of surface cleaning effects on properties of Schottky diodes on 4H-SiC
Keywords: 73.30.+y; 73.40.Cg; 73.40.Ei; 73.40.Sx; 79.40.+z; 81.65.Cf; 85.30.Hi; SiC; Ir; IrO2; Schottky; Surface cleaning; Surface etching;
Improving charge injection in organic thin-film transistors with thiol-based self-assembled monolayers
Keywords: 73.40.Cg; 78.30.Jw; 79.60.Fr; 81.16.DnOrganic thin-film transistor; Self-assembled monolayers; Contact resistance; Ultraviolet photoelectron spectroscopy; Atomic force microscopy
Improvement of the contact resistance between ITO and pentacene using various metal-oxide interlayers
Keywords: 85.30.Tv; 73.40.Cg; 77.55.+f; 79.60JvOrganic thin film transistors; Contact resistance; Metal oxide; Photoelectron spectroscopy
Effect of molybdenum electrode annealing on the interface properties between metal and pentacene
Keywords: 73.61.At; 73.40.Cg; 85.30.Tv; 72.80.Le; 61.72.CcMolybdenum; Contact resistance; OTFT; Pentacene; Annealing
Bottom-contact poly(3,3‴-didodecylquaterthiophene) thin-film transistors with reduced contact resistance
Keywords: 73.40.Cg; 73.40.Sx; 73.61.PhPoly(3,3‴-didodecylquaterthiophene); Contact resistance; Thin-film transistors; Electrodes; Treatment; Interface
Self-assembled monolayers mediated charge injection for high performance bottom-contact poly(3,3′′′-didodecylquaterthiophene) thin-film transistors
Keywords: 73.40.Cg; 73.40.Sx; 73.61.PhSelf-assembled monolayers (SAMs); Device mobilities; PQT-12 TFTs; Charge injection; Electrode/PQT-12 contacts; Surface-modification
The direct current and microwave resistivities arising from domain wall scattering for Ni and Co films
Keywords: 75.60.Ch; 73.40.Cg; 73.50.Bk; 75.50.CcCPW and CIW resistivities; Direct current and microwave frequencies; Magnetic force microscopy
Kelvin force microscopy at the second cantilever resonance: An out-of-vacuum crosstalk compensation setup
Keywords: 73.40.Cg; 73.30.++y; 73.40.Qv; 73.63.−b; 68.37.Ps; 68.47.FgAtomic force microscopy (AFM)
Contact effects in organic thin film transistors with printed electrodes
Keywords: 72.80.Le; 73.40.Cg; 73.40.Sx; 73.61.Ph.Microcontact printing; Organic thin film transistor; TFT; Pentacene; Selective dewetting; Self-assembled monolayers
Formation of low-resistance and transparent indium tin oxide ohmic contact for high-brightness GaN-based light-emitting diodes using a Sn–Ag interlayer
Keywords: 72.80.Ey; 73.40.Cg; 73.20.At; 79.60.BmOhmic contact; GaN; Indium tin oxide; Light-emitting diode; Ag–Sn alloy
Molecular electronic switch using Carbon nanotube electrodes
Keywords: 73.23.-b; 73.40.Cg; 73.63.Rt; 85.65.+h;
Contact resistance between pentacene and indium–tin oxide (ITO) electrode with surface treatment
Keywords: 73.40.Cg; 72.80.Le; 82.45.Xy; 73.30.+yContact resistance; Organic thin film transistor; Pentacene; Indium–tin oxide; Work function
Ta/Ni/Ta multilayered ohmic contacts on n-type SiC
Keywords: 68.55.âa; 73.40.Cg; SiC; Ohmic contact; Electrical properties; Carbon vacancy;
EFM phase investigation of the metal-organic film interface
Keywords: 36.20.âr; 73.40.Cg; 73.40.Sx; Conjugated polymers; P3HT; F8; Electrostatic force microscopy; Metal contacts;
New contact resistivity characterization method for non-uniform ohmic contacts on GaN
Keywords: 72.80.Ey; 73.40.Cg; 73.61.EyOhmic contact; GaN; TLM; Laser diode; Narrow TLM
Raman scattering characterization on SiC
Keywords: 78.30.-j; 63.20.-e; 73.40.Cg; 61.72.WwRaman scattering; SiC; Phonon; Interface; Ion-implantation; UV laser
A novel method of electrical characterization of a semiconductor diode at forward bias
Keywords: 73.30.+y; 73.40.Lq; 73.40.Cg; 85.30.DeSemiconductor diode; Admittance; Forward bias; Negative capacitance; Interfacial layer; GaN
Spin-injection efficiency and magnetoresistance in a hybrid ferromagnetic-semiconductor trilayer with interfacial barriers
Keywords: 72.25.Mk; 73.40.Cg; 73.40.Sx; Spin-injection efficiency; Spin-diffusion length; Magnetoresistance;
Mechanical fabrication of metal nano-contacts showing conductance quantization under electrochemical potential control
Keywords: 73.23.âb; 73.40.Jn; 73.40.Cg; Metal nano-constrictions; Quantized conductance; Electrochemical potential;
Thermal stability enhancement of silicides by using N2 and Ar implantation
Keywords: 81.05.Je; 68.60.Dv; 85.40.Ry; 68.55.Ac; 73.40.Cg; Cobalt silicide; Thermal stability; Nitrogen implantation; Argon implantation; Grain growth; Resistance;
Ta-Ru-N diffusion barriers for high-temperature contacts to p-type SiC
Keywords: 73.40.Cg; 73.40.Ns; SiC; Diffusion barrier; Ta-Ru-N; Ohmic contact;
Nano-interfacial space charge and single electron tunneling conduction in metal/polyimide/metal junctions
Keywords: 73.61.Ph; 73.23.Hk; 73.40.Cg; Surface potential; Interfacial space charge; Single electron tunneling; Photocurrent;
Resistivity and Seebeck coefficient measurements of a bismuth microwire array
Keywords: 71.55.Ak; 72.15.Jf; 73.40.Cg; Microwire array; Contact resistance; Interlayer; Ion plating method;
Voltage-current property of two HTS tapes connected by ordinary Sn-Pb solder
Keywords: 73.40.Cg; 74.25.Fy; 85.25.Kx; Sn-Pb solder; Shake hand; Pray hand; Joint;
Characterization of Pd/Ni/Au ohmic contacts on p-GaN
Keywords: 05.70.Np; 71.20.Lp; 73.40.Cg; 73.40.Kp; GaN; Contact resistance; Pd; Ni; Intermetallic compounds;
Conductivity measurements on phthalocyanine films: evaporated vs. pressure contacts
Keywords: 72.80.Le; 73.61.Ph; 73.40.Cg; 68.90.+g; A. Interfaces; A. Phthalocyanines; A. Thin films; D. Conductivity; D. Contacts;
Nitride-based LEDs with ITO on nanostructured silicon contact layers
Keywords: 42.72.Bj; 73.40.Cg; 78.60.Fi; 85.60.Jb; A1. Nanostructured silicon; B1. InGaN/GaN; B1. ITO; B3. LEDs;
Implantation and post-annealing characteristics when impinging small Bn clusters into silicon at low fluence
Keywords: 61.72.Tt; 81.40.Ef; 85.40.Ry; 73.40.Lq; 73.40.Cg; Cluster ion implantation; Annealing; Transient-enhanced diffusion; Junction depth; Sheet resistance;