کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1265586 | 972231 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Reducing the contact resistance in organic thin-film transistors by introducing a PEDOT:PSS hole-injection layer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی (عمومی)
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چکیده انگلیسی
We coated gold electrodes with poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) in order to reduce the contact resistance in pentacene organic field-effect transistors (OFETs). The crystallinity of the pentacene layers on the gold electrodes was found to increase upon coating the substrates with PEDOT:PSS, whereas the hole-injection barrier between the organic semiconductor and the metal electrode decreased from 0.85 to 0.14 eV. The increased crystallinity and reduced hole-injection barrier resulted in a significant reduction of the contact resistance in the pentacene OFETs, thus leading to an improvement of the field-effect mobility of the devices (from 0.031 to 0.218 cm2/Vs).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 9, Issue 5, October 2008, Pages 864–868
Journal: Organic Electronics - Volume 9, Issue 5, October 2008, Pages 864–868
نویسندگان
Kipyo Hong, Sang Yoon Yang, Chanwoo Yang, Se Hyun Kim, Danbi Choi, Chan Eon Park,