کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
749725 894845 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A novel method of electrical characterization of a semiconductor diode at forward bias
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
A novel method of electrical characterization of a semiconductor diode at forward bias
چکیده انگلیسی

A novel nondestructive method to characterize a semiconductor diode using admittance–voltage (A–V) measurements at forward bias is presented. For this method, the imaginary and the real part are considered simultaneously to get the accurate parameters of a diode, such as series resistance, junction capacitance, junction voltage and ideality factor at various forward biases. This method can also be used to detect and measure an interfacial layer in a real diode. With this method the n-GaN Schottky diodes with various ohmic contacts were investigated. The measurements confirmed that the giant negative capacitance (NC) of Schottky diodes is an effect of the junction and the interfacial layer can be considered as a layer structure with nonlinear resistance and capacitance.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 50, Issue 5, May 2006, Pages 821–825
نویسندگان
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