Raman scattering characterization on SiC

Raman scattering is a powerful non-contact and non-destructive characterization tool for SiC polytypes for both the lattice and electronic properties. Here, I will briefly review two recent Raman experiments on SiC; metal/SiC interface reactions probed by visible lasers and ion-implantation damages probed by deep UV lasers. These studies utilize the opposite aspects of the probe laser, i.e. deep and shallow penetration depth into SiC.