کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1596002 | 1515703 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Persistent photoconductivity in InAsN/InGaAs quantum wells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Optical properties of InAsN/InGaAs quantum wells on InP grown by gas source molecular beam epitaxy have been investigated by photoconductivity measurements. It is found that the persistent photoconductivity (PPC) does exist in this nitrogen compound material. Through a detailed study of the dependence of the PPC effect on excitation photon energy, temperature, decay kinetics and nitrogen composition, we point out that the origin of the PPC effect arises from the metastability of deep level centers. In different charge states, the defect centers can undergo a large lattice relaxation which creates an energy barrier to prevent the photoexcited carriers from returning to the original states, and thus the PPC occurs. We find that the obtained energy barrier increases with nitrogen composition.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 146, Issues 11â12, June 2008, Pages 510-513
Journal: Solid State Communications - Volume 146, Issues 11â12, June 2008, Pages 510-513
نویسندگان
J.C. Fan, Y.F. Chen,