Advances in numerical simulation of wide-bandgap bulk crystal growth

The paper reviews the basic aspects of sublimation growth of wide-bandgap semiconductors such as SiC and group-III nitrides. The most significant physical and chemical phenomena underlying the growth are considered: heat and mass transport, sublimation and condensation, heterogeneous chemical reactions, flow through reacting porous medium, thermoelastic stress, and defect generation. State of the art in numerical modeling of sublimation growth is discussed. Modeling is shown to be effective for solving of practically important problems of the process study and optimization.