Hall effect and magnetoresistance analysis by electron-hole coexisting model in AlInSb/InAsSb quantum wells

Transport properties were investigated for undoped Al0.1In0.9Sb/ InAs0.1Sb0.9 quantum wells (QWs), and two-carrier analyses were applied to the magnetic-field variations of the Hall coefficient and magnetoresistance at 77 K. The Hall coefficient increases with magnetic field, which shows coexistence of electrons and holes. This behaviour is similar to AlGaAsSb/ InAs QWs, which have a type-II band structure. Additionally, the Hall coefficient turns to decrease in more than 1 T, and the behaviour was not observed in the deep InAs QWs. This indicated that there are other electrons with different mobility. These are thought to be electrons extended over the QW, accumulated near the hetero-interface, and thermally excited in the barrier layer.