کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1865877 | 1037888 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Intersubband transition in symmetric AlxGa1 â xN/GaN double quantum wells with applied electric field
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک و نجوم (عمومی)
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چکیده انگلیسی
Influence of the applied electric field (AEF) on the intersubband transitions (ISBTs) in symmetric AlxGa1 â xN/GaN double quantum wells (DQWs) is investigated by self-consistent calculation. It is found that three- and four-energy-level DQWs can be realized when suitable electric field is applied. When the AEF is 0.93 MV/cm, the 1odd-2even ISBT has a comparable absorption coefficient with the 1even-2odd ISBT, and the four-energy-level DQWs are realized. The wavelengths of the 1odd-2even and 1even-2odd ISBTs are located at 1.31 and 1.62 μm, respectively. When the AEF is 1.10 MV/cm, the 1odd-2even and 1odd-2odd ISBTs have comparable absorption coefficients, and the three-energy-level DQWs are realized. The wavelengths of the 1odd-2even and 1odd-2odd ISBTs are located at 1.30 and 1.55 μm, respectively. The results suggest promising application to two-color optoelectronic devices operating within optical communication wavelength band, and this study also provides a method for realizing the two-color optoelectronic devices by using the AEF.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 373, Issue 1, 22 December 2008, Pages 136-139
Journal: Physics Letters A - Volume 373, Issue 1, 22 December 2008, Pages 136-139
نویسندگان
S.Y. Lei, Z.G. Dong, B. Shen, G.Y. Zhang,