کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8149455 | 1524394 | 2016 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of V/III ratio on the growth of (112¯2) AlGaN by metalorganic vapour phase epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The effect of V/III ratio on the growth and properties of AlGaN layers grown on (112¯2) AlN templates grown on (101¯0) sapphire by metalorganic vapour phase epitaxy was studied. The surface morphology of the (112¯2) AlGaN layers and the (112¯2) AlN templates showed an undulation along [11¯00]AlGaN,AlN. The Al-content and thickness of the layers increased with decreasing V/III ratio due to a reduction in the parasitic reactions of the precursors. The Al-content of the (112¯2) layers was found to be in the range of 29.5â47.9%, which is lower than the composition of the simultaneously grown (0001) reference layers (30.4â58.0%). This was attributed to a higher density of cation (nitrogen) dangling bonds on the (112¯2) surface. Low temperature photoluminescence measurements of the (112¯2) layers showed an emission wavelength that shifts gradually from 273 nm to 306 nm with increasing V/III ratio. A decreased PL intensity of the layers with decreasing V/III ratio was attributed to an increase in cation vacancies. The Stokes-shift of the (112¯2) layers was estimated to be about 60â194 meV, and this shift increases with increasing Al-content (decreasing V/III ratio) correlated to an increased exciton localization.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 435, 1 February 2016, Pages 12-18
Journal: Journal of Crystal Growth - Volume 435, 1 February 2016, Pages 12-18
نویسندگان
Duc V. Dinh, S.N. Alam, P.J. Parbrook,