Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring

► Plasma-assisted molecular beam epitaxy of AlN epilayers at temperatures below 800 °C. ► Droplet-free and atomically smooth surface of III-nitrides thin films. ► Segregation effects in superlattices AlGaN/AlN. ► Laser reflectometry and RHEED monitoring.