کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1794579 1023702 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of indium on the physical vapor transport growth of AlN
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Effect of indium on the physical vapor transport growth of AlN
چکیده انگلیسی

AlN bulk single crystals were grown by spontaneous nucleation on the side wall of a hot pressed BN crucible, using both aluminum metal and AlN powder as source materials in an open system. Optimization of reactor pressure, temperature profile, and crucible design yielded AlN crystals with an a-plane platelet morphology. The crystals had low (1 1 2¯ 0) ω rocking curve full-width at half-maximum values of 17–60 arcsecs indicative of their high crystalline quality. Further, the addition of 1% indium by weight to the source material was found to significantly influence growth. When Al metal was used as a source material, the addition of indium to the source material resulted in an increase in the average crystal size by roughly an order of magnitude. When AlN powder was used as a source material, the indium addition resulted in a decrease in the total number of nucleation sites. The results show that the addition of indium is a promising method for improving the physical vapor transport growth of AlN.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 4, 1 February 2009, Pages 1060–1064
نویسندگان
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