MOVPE-like HVPE of AlN using solid aluminum trichloride source

A new MOVPE-like hydride vapor-phase epitaxy (HVPE) using AlCl3 solid source is proposed for growing thick and high-quality AlN layers. For the new system, a high-purity AlCl3 (5 N grade) powder was produced. AlN epitaxial layers were characterized by X-ray diffraction (XRD) and optical absorption measurement. Also, impurities such as oxygen and carbon in the epitaxial layer were analyzed comparing to the conventional HVPE system using Al metal and HCl gas. It is shown that the new HVPE system can be applied to mass production, because the Al-precursor can be transported to the reactor as vapor.