Keywords: 68.55.Jk; 81.15.Cd; High power pulsed magnetron sputtering; Cr-DLC; Microstructure; Surface properties;
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Calculation of the surface energy of hcp metals by using the modified embedded atom method
Keywords: 68.35.Md; 68.47.De; 68.55.Jk; hcp metals; Surface energy; MEAM; Calculation;
Thickness dependence of microstructures in La0.9Sr0.1MnO3 thin films grown on exact-cut and miscut SrTiO3 substrates
Keywords: 68.55.Jk; 61.10.Nz; 81.15.Fg; 68.35.CtMicrostructures; Oriented growth; Surface morphology
Study of the electroluminescent properties of crystalline silicon wafers in devices based on junctions of indium-doped zinc oxide and porous silicon
Keywords: 68.55.-a; 68.55.Jk; 81.10.Dn; 81.15.RsElectroluminiscence; Porous Silicon; Zinc Oxide; Thin Solid Films
Growth of Bi on Cu(111): Alloying and dealloying transitions
Keywords: 61.72.Nn; 68.35.Ct; 68.55.Jk; Bismuth; Copper; Surface alloy; Dealloying; Scanning tunneling microscopy;
Study of thermally evaporated thin permalloy films by the Fresnel mode of TEM and AFM
Keywords: 75.60.Ch; 68.55.Jk; 68.37.Ps; 68.37.LpThin permalloy films; Magnetic domain structure; Morphological structure; Transmission electron microscopy; Atomic force microscopy
In-plane ordered grain boundaries inducing enhanced magnetoresistance in epitaxial manganite films
Keywords: 68.55.Jk; 68.35.Ct; 61.72.Mm; Manganite film; Ordered grain boundaries; Spin-polarized;
Effects of cooling rate and post-heat treatment on properties of ZnO thin films deposited by sol-gel method
Keywords: 78.55.Et; 81.20.Fw; 68.55.Jk; Zinc oxide; Sol-gel method; Atomic force microscopy; X-ray diffraction; Raman; Photoluminescence;
Microstructure and mechanical properties of CrN films fabricated by high power pulsed magnetron discharge plasma immersion ion implantation and deposition
Keywords: 68.55.Jk; 81.15.Cd; High power pulsed magnetron sputtering; Plasma ion implantation and deposition; High-voltage pulse; CrN;
Microstructures and optical properties of Cu-doped ZnO films prepared by radio frequency reactive magnetron sputtering
Keywords: 78.20.âe; 78.55.Et; 78.66.Hf; 68.55.Jk; Cu-doped ZnO thin films; RF magnetron sputtering; Microstructure; X-ray diffraction; Optical properties;
Improving electrochromic behavior of spray pyrolised WO3 thin solid films by Mo doping
Keywords: 68.55.âa; 68.55.Jk; 81.10.Dn; 81.15.Rs; 81.15.âz; Electrochromism; Tungsten trioxide; Spray pyrolisis; Mo doping;
NaCl islands decorated with 2D or 3D 3,4,9,10-perylene-tetracarboxylic-dianhydride nanostructures
Keywords: 68.37.Ef; 81.16.Rf; 68.55.Jk; Scanning tunneling microscopy; Nanoscale pattern formation; Structure and morphology; Crystalline orientation and texture; Molecular domain;
Effect of a LaSrCoO3 buffer layer on Pb1 â xLaxTi1 â x/4O3 films studied by polarized Raman spectroscopy
Keywords: 81.15.Cd; 87.64.Je; 68.55.Jk; Polarized Raman spectroscopy; Thin films; Lead titanate;
Heterojunction light emitting diodes fabricated with different n-layer oxide structures on p-GaN layers by magnetron sputtering
Keywords: 68.37.Lp; 68.55.Jk; 61.72.Nn; 61.43.Bn; Zinc oxide; Light emitting diodes; Sputtering; Heterojunction;
Electrical and optical properties of In2O3:Mo thin films prepared at various Mo-doping levels
Keywords: 68.55.Jk; 73.61.−r; 78.55.−mIndium oxide; Activated reactive evaporation; Transparent conducting oxide
Analysis of intensities of positive and negative ion species from silicon dioxide films using time-of-flight secondary ion mass spectrometry and electronegativity of fragments
Keywords: 33.15.Ry; 33.15.Ta; 36.40.âc; 68.49.Sf; 68.55.Jk; 77.55.+f; Silicon dioxide; Fragment species; Time-of-flight secondary ion mass spectrometry; Electronegativity;
Optimization of VI/II pressure ratio in ZnTe growth on GaAs(0 0 1) by molecular beam epitaxy
Keywords: 81.05.Dz; 68.35.Bs; 68.55.Jk; 81.15.Hi; ZnTe; Molecular beam epitaxy; Reflection high-energy electron diffraction; X-ray diffraction; Atomic force microscopy;
The Al-doping and post-annealing treatment effects on the structural and optical properties of ZnO:Al thin films deposited on Si substrate
Keywords: 78.20.âe; 78.55.Et; 78.66.Hf; 68.55.Jk; ZnO thin films; RF magnetron sputtering; X-ray diffraction; Optical properties;
Thermochromic nanocrystalline Au–VO2 composite thin films prepared by radiofrequency inverted cylindrical magnetron sputtering
Keywords: 81.07.-b; 68.55.jk; 78.67.-nInverted cylindrical magnetron sputtering; Thin films; Nanocomposite; Surface plasmon resonance; Plasmonic materials
Properties of Cu film and Ti/Cu film on polyimide prepared by ion beam techniques
Keywords: 52.77.Dq; 68.55.Jk; 68.35.Np; 68.60.Wm; Metal film; Polyimide; Ion implantation; Ion beam assisted deposition; Adhesion;
Structure, dielectric and ferroelectric properties of highly (1 0 0)-oriented BaTiO3 grown under low-temperature conditions
Keywords: 68.55.Jk; 77.22.Gm; 77.84.s; 81.20.Fw; Thin films; Crystallographic orientation; Dielectric properties; Ferroelectricity;
Comparative study of Si precipitation in silicon-rich oxide films
Keywords: 61.46.Df; 68.55.Ac; 68.55.Jk; Chemical vapour deposition; Si nanocrystals; Precipitation; Near-infrared emission; Nanocrystals density;
Systematic theoretical investigations for contribution of lattice constraint to novel atomic arrangements in alloy semiconductor thin films
Keywords: 61.66.Dk; 68.55.Jk; 31.15.Ct; GaNxAs1âx thin films; V-grooved substrate; Lattice constraint; Layered segregation; Surface segregation; Empirical interatomic potential;
Bi surfactant effects of Co/Cu multilayered films prepared by sputter deposition
Keywords: 68.55.jk; 75.47.De; 81.15.Cd; Surface segregation; Surfactant; Epitaxy; Metallic multilayers; Sputtering; Giant magnetoresistance;
Structural and optical properties of zinc nitride films prepared by rf magnetron sputtering
Keywords: 68.55.Jk; 73.61.Le; Zinc nitride; rf magnetron sputtering; Optical band gap;
Evidence of bimodal crystallite size distribution in μc-Si:H films
Keywords: 68.55.âa; 68.55.Jk; 68.35.Ct; Silicon; Thin films; Structural properties; Ellipsometry; Atomic force microscopy (AFM); Raman spectroscopy;
XRD and XPS analysis of laser treated vanadium oxide thin films
Keywords: 68.55.Jk; 81.20.Fw; 61.80.Ba; 79.60.i; Vanadium oxide thin films; Sol-gel process; Laser radiation; X-ray photoelectron spectroscopy;
Sol-gel obtained YSZ nanocrystals on a substrate: A Monte Carlo approach of the crystallographic orientation
Keywords: 61.46.Hk; 68.55.Jk; 68.18.Fg; Thin oxide film; Islanding process; Epitaxy; Photoluminescent nanocrystals;
ZnTe/Si heterostructures grown by isothermal closed space sublimation
Keywords: 81.05.Dz; 68.43.Mn; 68.55.Jk; 81.15.KkZinc telluride; II–VI semiconductors; Vapour phase epitaxy; Closed space sublimation; X-ray diffraction; Rutherford backscattering spectroscopy
Ultraviolet light emitting diode with n-ZnO:Ga/i-ZnO/p-GaN:Mg heterojunction
Keywords: 68.37. Lp; 68.55.Jk; 61.72.Nn; 61.43.BnLED; UV; Sputtering; ZnO; GaN
Growth and structure of Bi0.5(Na0.7K0.2Li0.1)0.5TiO3 thin films prepared by pulsed laser deposition technique
Keywords: 68.55.Jk; 81.15.Fg; 77.84.DyBi0.5(Na0.7K0.2Li0.1)0.5TiO3; Pulsed laser deposition; Lead-free piezoelectric thin films
In-situ cyclic pulse annealing of InN on AlN/Si during IR-lamp-heated MBE growth
Keywords: 68.55.Jk; 78.30.Fs; A1. Crystal structure; A1. Raman spectroscopy; A1. X-ray diffraction; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;
MOVPE growth of InN films using 1,1-dimethylhydrazine as a nitrogen precursor
Keywords: 61.10.Nz; 68.55.Jk; 81.15.KkA3. Metalorganic vapor phase epitaxy; B1. Indium nitride; B1. Nitrides; B1. Dimethylhydrazine
Electron microscopy analysis of dislocation behavior in HVPE-AlGaN layer grown on a stripe-patterned (0 0 0 1) sapphire substrate
Keywords: 68.37.Lp; 68.55.Jk; 81.15.KkA1. Electron microscopy; A3. Hydride vapor phase epitaxy; B1. Nitrides
Effects of crystalline quality on the ultraviolet emission and electrical properties of the ZnO films deposited by magnetron sputtering
Keywords: 78.55.Et; 81.05.Dz; 68.55.Jk; 73.61.Ga; Crystal quality; RF magnetron sputtering; Zinc oxide; Semiconducting II-VI materials;
Comparative study on structural and optical properties of ZnO thin films prepared by PLD using ZnO powder target and ceramic target
Keywords: 81.05.−t; 68.55.Jk; 42.70.−aPLD; ZnO thin films; Optical properties
Growth of ZnO:Al films by RF sputtering at room temperature for solar cell applications
Keywords: 73.61.−r; 68.55.Jk; 78.66.−w; 81.40.EfAluminum-doped ZnO (ZnO:Al) films; RF sputtering; Room temperature; Copper indium gallium selenide (CIGS) solar cells
Fabrication of CdTe solar cell using an Inx(OOH,S)y/CdS double layer as a heterojunction counterpart
Keywords: 84.60.Jt; 81.05.Dz; 78.40.Fy; 68.55.Jk; 66.30.NyCdTe solar cell; Window layer; Inx(OOHS)y; Chemical bath deposition
Microstructures and nano mechanical properties of the metal tungsten film
Keywords: 68.55.Jk; 81.15.CdW film; Microstructure; Mechanical property
Characteristics of silicon oxide thin films prepared by sol electrophoretic deposition method using tetraethylorthosilicate as the precursor
Keywords: 68.55.jk; Silica (SiO2); Electrophoretic deposition; Sol-gel; Tetraethylorthosilicate (TEOS); Flexible display;
Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition
Keywords: 68.55.Jk; 81.05.Ea; 81.15.GhA1. Crystal structure; A3. Chemical vapor deposition process; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III–V materials
Characterisation of nickel silicide thin films by spectroscopy and microscopy techniques
Keywords: 68.55.Nq; 82.80.âd; 68.55.Jk; 68.37.âd; 81.05.Je; Nickel silicide; Spectroscopy; Microscopy; Kikuchi patterns;
Effects of deposition temperature on the crystallinity of Ga-doped ZnO thin films on glass substrates prepared by sputtering method
Keywords: 68.37.Lp; 68.55.Jk; 61.50.Ks; Ga-doped ZnO; Transmission electron microscopy; Crystallinity; Atomic arrangement; Grain growth;
Effects of the thickness of GaAs spacer layers on the structure of multilayer stacked InAs quantum dots
Keywords: 68.37.Lp; 68.43.Hn; 68.55.Jk; 68.65.HbA1. Microstructure characterization; A1. Quantum dots; A1. Transmission electron microscopy (TEM); B1. Multilayer InAs/GaAs
Influence of annealing temperature on structural, optical and magnetic properties of Mn-doped ZnO thin films prepared by sol–gel method
Keywords: 78.20.Ci; 68.55.Jk; 75.50.PpDiluted magnetic semiconductor; Sol–gel method; Ferromagnetism
Sensitized luminescence through nanoscopic effects of ZnO encapsulated in SiO2:Tb3+ sol gel derived phosphor
Keywords: 68.37.Hk; 68.37.Ps; 68.55.Jk; 78.55.Hx; 78.60.Hk; 81.15.FgEnergy transfer; Photoluminescence; Cathodoluminescence; ZnO:SiO2:Tb3+; Rare-earth
Structure and washing fastness of composite fluorocarbon/ZnO films prepared by RF sputtering
Keywords: 68.55.Jk; 81.07.Pr; 81.15.Cd; 82.35.Gh; 82.35.NpComposite films; RF magnetron sputtering; X-ray photoelectron spectroscopy; FT-IR; Hydrophobicity; Washing fastness
Cobalt-doped zinc oxide thin solid films deposited by chemical spray techniques on silicon (1 0 0) substrates: The effects of the [Co]/[Zn] ratio on the morphological and physical properties
Keywords: 68.55.−a; 68.55.Jk; 81.10.DnThin solid films; Chemical spray techniques; Zinc oxide
Homogenization of textured as well as randomly oriented ferroelectric polycrystals
Keywords: 68.55.Jk; 77.65.-j; 77.80.Dj; 77.84.Dy; 77.84.-s; Piezoelectricity; Homogenization; Finite element modeling (FEM); Texture;
Fabrication of ZnO thin film-nanowires hybrid homojunction on silicon substrate
Keywords: 61.72.Vv; 68.55.Jk; 81.05.Dz; 81.07.-b; 85.30.-z; A. Semiconductors; B. Nanofabrications; C. Hybrid structures; D. Electrical properties;