کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5366830 | 1388356 | 2009 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Effects of deposition temperature on the crystallinity of Ga-doped ZnO thin films on glass substrates prepared by sputtering method Effects of deposition temperature on the crystallinity of Ga-doped ZnO thin films on glass substrates prepared by sputtering method](/preview/png/5366830.png)
The microstructural characterization of Ga-doped (5Â at.%) ZnO thin film was conducted by a transmission electron microscopy study. The atomic arrangement of Ga-doped ZnO having an wurtzite structure was identified by the experimental HRTEM and Fourier filtered images as well as the electron diffractions. As a result, we have revealed that the orientation and defect density of Ga-doped ZnO thin films were greatly influenced by the deposition temperature, resulting in the variation of electrical property. In other words, the tendency forming a c-axis oriented texture grows up and the defects such as dislocations and stacking faults decrease, as the temperature of sputtering deposition increases. Consequently, the electrical properties of Ga-doped ZnO thin films can be controlled by the deposition temperature directly related with the defect density.
Journal: Applied Surface Science - Volume 255, Issue 17, 15 June 2009, Pages 7532-7536