کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1794910 1023709 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition
چکیده انگلیسی

A fabrication process for growth of GaN lateral polarity junctions consisting of Ga-polar and N-polar domains grown simultaneously side-by-side on c-plane sapphire was developed using the polarity control scheme. An ammonia-annealing step following deposition and patterning of a thin low-temperature AlN nucleation layer played a crucial role in avoiding mixed-polarity growth of the remaining AlN nucleation layer, as well as in nitriding the bare sapphire surface to facilitate growth of N-polar GaN. The achievement of both polar domains, free from inversion domains within a contiguous domain, led to Ga-polar domain exhibiting featureless morphology with highly resistive characteristics, while N-polar domains exhibited hexagonally faceted morphology and were highly conductive.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 10, 1 May 2009, Pages 3044–3048
نویسندگان
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