Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers
Keywords: 61.05.cp; 61.72.Dd; 61.72.Lk; 61.72.Nn; 81.05.Ea; 81.15.GhA1. Crystal structure; A1. Line defects; A1. Planar defects; A3. Metalorganic vapour phase epitaxy; B1. Nitrides; B2. Semiconducting III–V materials