کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1619395 | 1005720 | 2010 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical and optical properties of In2O3:Mo thin films prepared at various Mo-doping levels
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electrical and optical properties of In2O3:Mo thin films prepared at various Mo-doping levels Electrical and optical properties of In2O3:Mo thin films prepared at various Mo-doping levels](/preview/png/1619395.png)
چکیده انگلیسی
The optically transparent conducting molybdenum-doped indium oxide thin films (In2O3:Mo) were prepared on glass substrates by an activated reactive evaporation method and the influence of molybdenum doping levels on the electrical and optical properties of the films had been investigated systematically. The films, synthesized at a substrate temperature of 573 K and a Mo-doping level of 3 at.%, exhibited a minimum electrical resistivity of 5.2 × 10−4 Ω cm and an average optical transmittance of 90% in the visible region with a band gap of 3.68 eV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 504, Issue 2, 20 August 2010, Pages 351–356
Journal: Journal of Alloys and Compounds - Volume 504, Issue 2, 20 August 2010, Pages 351–356
نویسندگان
S. Kaleemulla, N. Madhusudhana Rao, M. Girish Joshi, A. Sivasankar Reddy, S. Uthanna, P. Sreedhara Reddy,