کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1787182 | 1023433 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characteristics of silicon oxide thin films prepared by sol electrophoretic deposition method using tetraethylorthosilicate as the precursor
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Silicon dioxide films were prepared on p-type Si (1Â 0Â 0) substrates by sol electrophoretic deposition (EPD) using tetraethylorthosilicate (TEOS) at low temperature. According to the variation of sol dipping conditions, we estimated the characteristics of SiO2 films, such as composition, surface morphology, wet etch rate, breakdown voltage, etc. The growth rate of the film increased linearly with increasing TEOS quantity in solution. It increased exponentially with the increase in deposition time, and the film thickness was saturated at approximately 200Â nm on hydrophilic Si surface after more than 6Â days. The growth rate of the EPD SiO2 films on the hydrophobic Si surface was much lower than that of the film on the hydrophilic Si surface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 9, Issue 2, March 2009, Pages 551-555
Journal: Current Applied Physics - Volume 9, Issue 2, March 2009, Pages 551-555
نویسندگان
Sa-Kyun Rha, Tammy P. Chou, Guozhong Cao, Youn-Seoung Lee, Won-Jun Lee,