ZnTe/Si heterostructures grown by isothermal closed space sublimation

ZnTe films with different thickness were grown onto (001) Si substrates using isothermal closed space sublimation by alternated sublimation of Zn and Te sources. As a result ZnTe polycrystalline films were obtained with a strong [111] orientation as revealed by X-ray diffraction patterns. The reason for this polycrystalline nature of the samples comes from incomplete removal of SiO2 from the Si substrate surface. A preferential adsorption of Te in the first stages of the growth was concluded from Rutherford backscattering spectra analysis.