MOVPE growth of laser structures for high-power applications at different ambient temperatures

Lower operating temperatures permit lower barrier heights which results in a lower series resistance and therefore higher conversion efficiency at high power. Carrier concentration and mobility for different AlxGa1−xAs compositions were estimated in dependence on temperature. An optimized structure reached 20 W for a single laser diode and 2 kW for a laser bar in QCW mode at −70 °C.