Keywords: A1 رابط ها; A2. Czochralski method; A1. Growth interface electromotive force; A1. Defects; A1. Convection; A1 Fluid flows; A1. Interfaces;
مقالات ISI A1 رابط ها (ترجمه نشده)
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Keywords: A1 رابط ها; A1. Nucleation; A1. Interfaces; A1. Growth models; A1. Crystal morphology;
Keywords: A1 رابط ها; A1. Characterization; A1. Interfaces; A1. Heat transfer; A1. Radiation; A2. Laser heated pedestal growth; B1. Sapphire;
Keywords: A1 رابط ها; A1. Solidification; A1. Interfaces; A1. Convection; A1. Growth models; A1. Nucleation;
Keywords: A1 رابط ها; A1. Interfaces; A1. Computer simulation; A2. Single crystal growth; B1. Sapphire;
Keywords: A1 رابط ها; A1. Interfaces; A3. Atomic layer deposition; B1. Perovskites; B2. Ferroelectric materials;
Keywords: A1 رابط ها; A1. Solidification; A1. Interfaces; A1. Heat transfer; A1. Water droplets; A1. Ice shells; A1. Interface oscillation;
Keywords: A1 رابط ها; A1. Nucleation; A1. Interfaces; A1. Template-induced nucleation; A1. Polymorphic occurrence domains (PoD); A1. Solvent effect; B1. Carbamazepine;
Keywords: A1 رابط ها; A1. Directional solidification; A1. Interfaces; A1. Morphological stability; A1. Solidification;
Keywords: A1 رابط ها; A1. Colloidal crystals; A1. Impurities; A1. Growth models; A1. Interfaces; A1. Solidification
Keywords: A1 رابط ها; A1. Single crystal growth; A1. Growth models; A1. Interfaces; A1. Interface kinetics; A1. Roughening; A2. Horizontal ribbon growth
Keywords: A1 رابط ها; A1. Interfaces; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B2. Semiconducting III–V materials; B3. Laser diodes
Keywords: A1 رابط ها; A1. Interfaces; A1. X-ray diffraction; A3. Liquid phase epitaxy; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting III-V materials;
Keywords: A1 رابط ها; A1. Solidification; A1. Interfaces; A1. Convection; A1. Fluid flows; A1. Nucleation; A1. Stirring
Keywords: A1 رابط ها; A1. Computer simulation; A1. Convection; A1. Heat transfer; A1. Mass transfer; A1. Impurities; A1. Interfaces; A1. Segregation; A2. Bridgman technique; A2. Microgravity conditions
Keywords: A1 رابط ها; A1. Crystal morphology; A1. Growth models; A1. Interfaces; A1. Nucleation; A1. Solidification
Keywords: A1 رابط ها; A1. Growth models; A1. Impurities; A1. Interfaces; A1. Segregation; A1. Solidification; B1. Oxides;
Keywords: A1 رابط ها; A1. Interfaces; A1. Computer simulation; A1. Solidification; A2. Growth from melt; B1. Alloys;
Keywords: A1 رابط ها; A1. Interfaces; A1. Grain boundaries; A1. Dendrites; A1. Solidification; B1. Organic compounds
Keywords: A1 رابط ها; A1. Directional solidification; A1. Heat transfer; A1. Interfaces; A1. Stresses; A2. Quasi-single crystal growth;
Keywords: A1 رابط ها; A1. Interfaces; A1. Phase equilibria; A1. Surface properties; B1. Organic compounds;
The preparation and the sustained release of titanium dioxide hollow particles encapsulating L-ascorbic acid
Keywords: A1 رابط ها; A1. Biomaterials; A1. Crystal morphology; A1. Interfaces; B1. Titanium compounds;
Interface control by rotating submerged heater/baffle in vertical Bridgman configuration
Keywords: A1 رابط ها; A1. Convection; A1. Heat transfer; A2. Bridgman technique; A2. Czochralski method; B1. Salts; A1. Interfaces; A1. Nusselt number;
In-situ growth mode control of AlN on SiC substrate by sublimation closed space technique
Keywords: A1 رابط ها; A1. Interfaces; Crystal morphology; Line defects; A2. Growth from vapor; B1. Nitrides;
Modification of growth interface of CdZnTe crystals in THM process by ACRT
Keywords: A1 رابط ها; A1. Interfaces; A1. Te inclusions; A2. Accelerated crucible rotation technique; A2. Traveling heater method; B2. Semiconducting II-VI materials; B2. CdZnTe;
Control of interface shape during high melting sesquioxide crystal growth by HEM technique
Keywords: A1 رابط ها; A1. Interfaces; A1. Computer simulation; A2. Growth from melt; B1. Oxides;
Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVD
Keywords: A1 رابط ها; A1. Interfaces; A3. Metal organic chemical vapor deposition; B1. Nanomaterials; B1. Antimonides; B2. Semiconducting III-V materials; B3. Heterojunction semiconductor devices;
Growth and characterization of charge carrier spatially confined SrMnO3/La0.7Sr0.3MnO3/SrMnO3 trilayers
Keywords: A1 رابط ها; A1. Interfaces; A3. Molecular beam epitaxy; A3. Quantum wells.; B1. Manganites; B1. Oxides; B1. Perovskites;
Growth and interface engineering in thin-film Ba0.6Sr0.4TiO3/SrMoO3 heterostructures
Keywords: A1 رابط ها; A1. Surfaces; A1. Interfaces; A3. Laser epitaxy; A3. Heterostrostructures; B1. Perovskite oxides;
GaP-interlayer formation on epitaxial GaAs(100) surfaces in MOVPE ambient
Keywords: A1 رابط ها; A1. High resolution X-ray diffraction; A1. Interfaces; A1. Growth models; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting gallium compounds; B2. Semiconducting III-V materials;
Analysis of γâα transformation in Fe-C-Mn ternary alloy by phase-field simulation coupled with CALPHAD database
Keywords: A1 رابط ها; A1. Diffusion; A1. Interfaces; B1. Alloys; B1.Metals;
Atomistic simulations of solidification process in B2-LiPb solid(0Â 0Â 1)-liquid system
Keywords: A1 رابط ها; A1. Solidification; A1. Interfaces; A1. Point defect; A1. Computer simulation; A2. Growth from melt; B1. Alloys;
Self-separation of freestanding diamond films using graphite interlayers precipitated from C-dissolved Ni substrates
Keywords: A1 رابط ها; A1. Interfaces; A1. Segregation; A3. Chemical vapor deposition; B1. Diamond;
Sensitivity of heterointerfaces on emission wavelength of quantum cascade lasers
Keywords: A1 رابط ها; A1. Interfaces; A1. Segregation; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B2. Semiconducting III-V materials; B3. Infrared devices;
Mechanism of stress control for GaN growth on Si using AlN interlayers
Keywords: A1 رابط ها; A1. Atomic force microscopy; A1. Interfaces; A3. Metalorganic chemical vapor deposition; B1. Nitrides;
In-situ detection of growth striations by crystallization electromotive force measurement during Czochralski crystal growth
Keywords: A1 رابط ها; A1. Defects; A1. Interfaces; A2. Czochralski method; B1. Lithium compounds; B1. Niobates; B1. Oxides;
The role of titanium at the SrTiO3/GaAs epitaxial interface
Keywords: A1 رابط ها; A1. Interfaces; A1. Reflection high energy electron diffraction; A3. Molecular beam epitaxy; B1. Perovskites; B2. Semiconducting III–V materials
Towards defect-free epitaxial CdTe and MgCdTe layers grown on InSb (001) substrates
Keywords: A1 رابط ها; A1. Defects; A1. Interfaces; A3. Molecular beam epitaxy; B1. Antimonides; B1. Tellurides; B2. Semiconducting II–VI
MOVPE growth of laser structures for high-power applications at different ambient temperatures
Keywords: A1 رابط ها; A1. Interfaces; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B2. Semiconducting III-V materials; B3. Laser diodes;
Preparation of a smooth GaN-Gallium solid-liquid interface
Keywords: A1 رابط ها; A1. X-ray diffraction; A1. Interfaces; A3. Liquid phase epitaxy; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting III-V materials;
ZrB2 thin films deposited on GaN(0001) by magnetron sputtering from a ZrB2 target
Keywords: A1 رابط ها; A1. X-ray diffraction; A1. Interfaces; A1. Energy-dispersive X-ray spectroscopy; A1. Electron energy loss spectroscopy; A3. Physical vapor deposition processes; B1. Borides;
Parameters influencing interfacial morphology in GaAs/Ge superlattices grown by metal organic chemical vapor deposition
Keywords: A1 رابط ها; A1. Interfaces; A3. Metalorganic chemical vapor deposition; B2. Semiconducting gallium arsenide; B2. Semiconducting germanium; B2. Semiconducting III-V materials;
AlN interlayer to improve the epitaxial growth of SmN on GaN (0001)
Keywords: A1 رابط ها; A1. Segregation; A1. Reflection high energy electron diffraction; A1. Interfaces; A3. Molecular beam epitaxy; B1. Nitrides; B1. Rare earth compounds;
Understanding the effects of Si (111) nitridation on the spontaneous growth and properties of GaN nanowires
Keywords: A1 رابط ها; A1. Interfaces; A1. Surface processes; A3. Molecular beam epitaxy; B1. Nitrides; B1. Nanomaterials; B2. Semiconducting gallium compounds;
Heterogeneous growth of calcite at aragonite {001}- and vaterite {001}-melt interfaces: A molecular dynamics simulation study
Keywords: A1 رابط ها; A1. Computer simulation; A1. Interfaces; A2. Growth from melt; B1. Minerals;
Synchrotron X-ray diffraction topography study of bonding-induced strain in silicon-on-insulator wafers
Keywords: A1 رابط ها; A1. X-ray topography; A1. X-ray diffraction; A1. Interfaces; B2. Semiconducting silicon;
Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates
Keywords: A1 رابط ها; A1. Substrates; A1. Interfaces; A1. Line Defects; B1. Molecular beam epitaxy; B3. Nitrides;
MBE growth and interfaces characterizations of strained HgTe/CdTe topological insulators
Keywords: A1 رابط ها; A1. Interfaces; A1. Low dimensional structures; A1. X-ray diffraction; A3. Molecular beam epitaxy; B2. Semiconducting II-VI materials;
Nanoheterostructures with InSb quantum dashes inserted in the InAs unipolar matrix
Keywords: A1 رابط ها; A1. Interfaces; A1. Nanostructures; A1. Atomic force microscopy; A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B2. Semiconducting III–V materials
Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality
Keywords: A1 رابط ها; A1. Interfaces; A1. X-ray diffraction; A3. Superattices; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting ternary compounds;