Optimization via simulation of a seeded directional solidification process for quasi-single crystalline silicon ingots by insulation partition design

In this study, transient global simulations are used to investigate the effects of the insulation partition design upon the heat transfer and thermal stress in an industrial seeded directional solidification (DS) furnace for quasi-single crystalline (QSC) silicon ingots. To optimize the DS process and improve the thermal field, a motionless insulation partition block with two position placements and a dynamic block are designed for a seeded DS furnace. Simulation results show that the dynamic partition block moving along the side insulation layer with a constant velocity can significantly reduce the total heating power consumption and can improve the crystal growth rate. Moreover, the melt-crystal interface shape in the dynamic case is the most favorable for growth of QSC silicon ingots. In addition, the thermal stress in the silicon ingot grown using the dynamic partition block is less than that in other two cases using motionless blocks.