Keywords: A1 انتقال گرما; A1. Growth models; A1. Heat transfer; A3. Chemical vapor deposition processes; A3. Selective epitaxy; B2. Semiconducting materials;
مقالات ISI A1 انتقال گرما (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Keywords: A1 انتقال گرما; A1. Heat transfer; A2. Floating zone technique; A2. Growth from melt; B1. Oxide; B2. Titanium oxide;
Keywords: A1 انتقال گرما; A1. Fluid flows; A1. Computer simulation; A1. Heat transfer; A1. Convection; A1. Seed crystals;
Keywords: A1 انتقال گرما; A1. Computer simulation; A1. Fluid flows; A1. Heat transfer; A2. Particle engulfment; B2. Multicrystalline silicon; B3. Solar cells;
Keywords: A1 انتقال گرما; A1. Characterization; A1. Interfaces; A1. Heat transfer; A1. Radiation; A2. Laser heated pedestal growth; B1. Sapphire;
Keywords: A1 انتقال گرما; A1. Thermal stress; A1. Heat transfer; B1. Sapphire crystal; A2. Heat exchanger method;
Keywords: A1 انتقال گرما; A1. Solidification; A1. Interfaces; A1. Heat transfer; A1. Water droplets; A1. Ice shells; A1. Interface oscillation;
Keywords: A1 انتقال گرما; A1. Computer simulation; A1. Fluid flows; A1. Heat transfer; A2. Particle engulfment; B2. Multicrystalline silicon; B3. Solar cells;
Keywords: A1 انتقال گرما; A1. Growth models; A1. Mass transfer; A1. Heat transfer; A2. Growth from solutions; B1. Gas hydrate;
Keywords: A1 انتقال گرما; A1. Computer simulation; A1. Fluid flows; A1. Heat transfer; A1. Magnetic fields; A1. Stresses; A2. Growth from melt;
Keywords: A1 انتقال گرما; A1. Computer simulation; A1. Heat transfer; A2. Floating zone technique; A2. Single crystal growth; B2. Semiconducting silicon;
Keywords: A1 انتقال گرما; A1. Heat transfer; A2. Floating zone technique; A2. Growth from melt; B1. Elemental solids; B2. Semiconducting silicon;
Keywords: A1 انتقال گرما; A1. Computer simulation; A1. Heat transfer; A2. Floating zone technique; A2. Single crystal growth; B2. Semiconducting silicon;
Keywords: A1 انتقال گرما; A1. Morphology; A1. Polymorphism; A1. Heat transfer; A1. High resolution X-ray diffraction; A2. Spray drying; B1. Mannitol;
Keywords: A1 انتقال گرما; A1. Computer simulation; A1. Heat transfer; A1. Impurities; A2. Growth from melt; B2. Semiconducting silicon; B3. Solar cells;
Keywords: A1 انتقال گرما; A1. Computer simulation; A1. Convection; A1. Heat transfer; A2. Top seeded solution growth; B2. Semiconducting silicon compounds;
Keywords: A1 انتقال گرما; A1. Computer simulation; A1. Fluid flows; A1. Heat transfer; A2. Particle engulfment; B2. Multicrystalline silicon; B3. Solar cells;
Keywords: A1 انتقال گرما; A1. Computer simulation; A1. Directional solidification; A1. Heat transfer; A2. Growth from melt; B3. Solar cells
Keywords: A1 انتقال گرما; A1. Computer simulation; A1. Directional solidification; A1. Heat transfer; A1. Multi-crystalline silicon; A3. Solar cells;
Keywords: A1 انتقال گرما; A2. Czochralski method; A1. Crystal morphology; A1. Heat transfer; A1. Radiation; A1. Interface; B1. Oxides and silicon;
Keywords: A1 انتقال گرما; A1. Directional solidification; A1. Heat transfer; A1. Computer simulation; A2. Bridgman technique; A2. Location
Keywords: A1 انتقال گرما; A1. Heat transfer; A1. Nucleation; A1. Solidification; A2. Growth from melt; B1. Metals;
Keywords: A1 انتقال گرما; A1. Heat transfer; A1. Crystal morphology; A1. Computer simulation;; A2. Growth from melt; A2. Czochralski method; B2. Semiconducting silicon
Keywords: A1 انتقال گرما; A1. Computer simulation; A1. Directional solidification; A1. Heat transfer; A2. Industrial crystallization; B3. Solar cells
Keywords: A1 انتقال گرما; A1. Convection; A1. Heat transfer; A1. Mass transfer; A1. Segregation; B1. Bridgman technique; B1. Czochralski method
Keywords: A1 انتقال گرما; A1. Directional solidification; A1. Heat transfer; A1. Radiation; A1. Computer simulation; A2. Bridgman technique;
Keywords: A1 انتقال گرما; A1. Solidification; A1. Computer simulation; A1. Heat transfer; A1. Mushy zone dynamics; B1. Intermetallics;
Keywords: A1 انتقال گرما; A1. Finite element simulation; A1. Heat transfer; B1. Diamond; B1. Diamond; B3. Cubic high-pressure apparatus
Keywords: A1 انتقال گرما; A1. Computer simulation; A1. Heat transfer; A1. Directional solidification; B3. Solar cells
Keywords: A1 انتقال گرما; A1. Computer simulation; A1. Convection; A1. Heat transfer; A1. Mass transfer; A1. Impurities; A1. Interfaces; A1. Segregation; A2. Bridgman technique; A2. Microgravity conditions
Keywords: A1 انتقال گرما; A1. Heat transfer; A1. Computer simulation; A2. Single crystal growth; B1. Sapphire;
Keywords: A1 انتقال گرما; A1. Computer simulation; A1. Heat transfer; A1. Directional solidification; B3. Solar cells
Keywords: A1 انتقال گرما; A1. Computer simulation; A1. Heat transfer; A1. Impurities; A1. Mass transfer; B3. Solar cells;
Keywords: A1 انتقال گرما; A1. Computer simulation; A1. Convection; A1. Heat transfer; A1. Segregation; A2. Edge defined film fed growth; B2. Semiconducting silicon;
Keywords: A1 انتقال گرما; A1. Computer simulation; A1. Crystal morphology; A1. Directional solidification; A1. Heat transfer; A2. Growth from melt
Keywords: A1 انتقال گرما; A1. Directional solidification; A1. Heat transfer; A1. Interfaces; A1. Stresses; A2. Quasi-single crystal growth;
3D numerical design of the thermal field before seeding in an edge-defined film-fed growth system for β-Ga2O3 ribbon crystals
Keywords: A1 انتقال گرما; A1. Computer simulation; A1. Heat transfer; A2. Growth from melt; A2. Edge-defined film-fed growth; B1. β-Ga2O3;
Interface control by rotating submerged heater/baffle in vertical Bridgman configuration
Keywords: A1 انتقال گرما; A1. Convection; A1. Heat transfer; A2. Bridgman technique; A2. Czochralski method; B1. Salts; A1. Interfaces; A1. Nusselt number;
Computational analysis of heat transfer, thermal stress and dislocation density during resistively Czochralski growth of germanium single crystal
Keywords: A1 انتقال گرما; A1. Computer simulation; A1. Heat transfer; A1. Fliud flows; A2. Czochralski method; B2. Semiconducting germanium;
Thermal stress simulation of optimized SiC single crystal growth crucible structure
Keywords: A1 انتقال گرما; B2. SiC; A2. Growth from vapor; A1. Computer simulation; A1. Heat transfer; A1. Stresses;
Effect of power history on the shape and the thermal stress of a large sapphire crystal during the Kyropoulos process
Keywords: A1 انتقال گرما; A1. Computer simulation; A1. Heat transfer; A1. Stresses; A2. Kyropoulos method; A2. Single crystal growth; B1. Sapphire;
Numerical investigation of the effect of static magnetic field on the TSSG growth of SiC
Keywords: A1 انتقال گرما; A1. Computer simulation; A1. Fluid flows; A1. Magnetic fields; A1. Heat transfer; A1. Mass transfer; A2. Top seeded solution growth;
A first-principle model of 300â¯mm Czochralski single-crystal Si production process for predicting crystal radius and crystal growth rate
Keywords: A1 انتقال گرما; A1. Growth models; A1. Heat transfer; A2. Czochralski method; A2. Single crystal growth; A2. Industrial crystallization; B2. Semiconducting silicon;
Hotzone design and optimization for 2-in. AlN PVT growth process through global heat transfer modeling and simulations
Keywords: A1 انتقال گرما; A1. Computer simulation; A1. Heat transfer; A1. Substrates; A2. Growth from vapor;
Towards optimization of ACRT schedules applied to the gradient freeze growth of cadmium zinc telluride
Keywords: A1 انتقال گرما; A1. Computer simulation; A1. Crystal morphology; A1. Convection; A1. Heat transfer; A1. Mass transfer; B1. Semiconducting II-VI materials;
Physical modelling of Czochralski crystal growth in horizontal magnetic field
Keywords: A1 انتقال گرما; A1. Fluid flows; A1. Heat transfer; A2. Magnetic field assisted Czochralski method; B2. Semiconducting materials;
Anisotropic and temperature-dependent thermal conductivity of PbI2
Keywords: A1 انتقال گرما; A1. Heat transfer; A1. Anisotropic thermal conductivity; B1. Halides; B1. Lead iodide; B2. Semiconducting lead compounds; B2. Radiation detection materials;
Measurement and thermal modeling of sapphire substrate temperature at III-Nitride MOVPE conditions
Keywords: A1 انتقال گرما; A3. Metalorganic vapor phase epitaxy; A3. Metalorganic chemical vapor deposition; A3. Organometallic vapor phase epitaxy; A1. Heat transfer; B1. Nitrides;
Global simulation of the induction heating TSSG process of SiC for the effects of Marangoni convection, free surface deformation and seed rotation
Keywords: A1 انتقال گرما; A1. Computer simulation; A1. Fluid flows; A1. Magnetic fields; A1. Heat transfer; A1. Mass transfer; A2. Top seeded solution growth;
Features of SOI substrates heating in MBE growth process obtained by low-coherence tandem interferometry
Keywords: A1 انتقال گرما; A3. Molecular beam epitaxy; B2. Semiconducting silicon; A1. Low-coherence interferometry; A1. Real-time temperature measurements; A1. Heat transfer;