کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1789693 | 1524388 | 2016 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Upgrade of the hot zone for large-size high-performance multi-crystalline silicon ingot casting
ترجمه فارسی عنوان
ارتقاء منطقه داغ برای ریخته گری شمش های سیلیکون چند منظوره با کارایی بالا
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
چکیده انگلیسی
Casting larger silicon ingots by upgrading the hot zone is one of the main methods used to reduce the cost of multi-crystalline silicon wafers. In this paper, a new hot zone is designed and a transient global model is applied to investigate the effects of the new hot zone on the electricity consumption, the crystal growth rate, and the shape of the C-M interface during the solidification process. Based on the simulation results, a generation-five, directional-solidification furnace was upgraded and implemented in casting experiments. The experimental results show that the feedstock capacity increased by 77.8%, the crystal growth efficiency increased by 53.8%, and the average yield rate of the silicon ingots increased by 9%. The crystal-melt interface was flatter and the growth direction of the grains was almost straight upward.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 441, 1 May 2016, Pages 58-63
Journal: Journal of Crystal Growth - Volume 441, 1 May 2016, Pages 58-63
نویسندگان
Zhiyong Wu, Genxiang Zhong, Xucheng Zhou, Zhaoyu Zhang, Zixu Wang, Wenliang Chen, Xinming Huang,