Electrically conducting n-type AlGaN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

• N-DBR epitaxial structure characterization with microscopy techniques.
• N-type DBR has peak reflectivity of 91.6% at 368 nm with stopband of 11 nm.
• N-type DBR has vertical resistance of 5.5 Ω or bulk resistivity of 0.52 Ω cm.
• First detailed electrical characterizations on an electrically conducting DBR.

We report an electrically conducting 40-pair silicon doped Al0.12Ga0.88N/GaN distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition on a silicon doped n-type GaN template. Due to the relatively small lattice mismatch between AlGaN and GaN, strain managing layers are not required for crack-free n-DBR growth. The DBR demonstrates a peak reflectivity of 91.6% at 368 nm with stopband of 11 nm. In addition, the 40-pair n-DBR shows the vertical resistance of 5.5 Ω, which corresponds to bulk resistivity of 0.52 Ω cm, near the maximum measured current of 100 mA.